| Allicdata Part #: | IXTA6N50D2-ND |
| Manufacturer Part#: |
IXTA6N50D2 |
| Price: | $ 4.42 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 6A D2PAK |
| More Detail: | N-Channel 500V 6A (Tc) 300W (Tc) Surface Mount TO-... |
| DataSheet: | IXTA6N50D2 Datasheet/PDF |
| Quantity: | 263 |
| 1 +: | $ 4.42260 |
| 10 +: | $ 4.28992 |
| 100 +: | $ 4.20147 |
| 1000 +: | $ 4.11302 |
| 10000 +: | $ 3.98034 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (IXTA) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 96nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 500 mOhm @ 3A, 0V |
| Drive Voltage (Max Rds On, Min Rds On): | -- |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTA6N50D2 is a type of Vertical Double Diffused Metal Oxide Semidonductor Field Effect Transistor (VDMOSFET) that is especially suitable for use in switchmode power supply applications. This device is designed to be directly driven by a signal source and features an integrated high-side driver. It is designed to be operated in a wide VDS range from 4.7V to 40V and is capable of delivering up to 600 mA continuous current.
The operating principle of the IXTA6N50D2 can be summarized as the following: A gate-induced electric field created by an applied voltage controls the current flow between the device\'s source and drain. A high gate-to-source voltage (VGS) is necessary to turn the device on, while a low VGS level is necessary to turn it off. This action allows the IXTA6N50D2 to be used as an electronic switch. The source and drain current can be adjusted using the gate voltage, enabling the device to operate as a linear amplifier.
The IXTA6N50D2 offers numerous advantages over other types of transistors in terms of power efficiency, size, and reliability. Its integrated high-side driver allows for easy interfacing with a PWM controller. Since it is a VDMOSFET, the IXTA6N50D2 offers low RDS(ON), resulting in less power loss and higher efficiency. This device is also physically small and can be mounted on both through-hole and surface mount boards, making it ideal for use in a variety of applications. Additionally, its high dielectric strength rating and overcurrent protection ensure a long operating life and reliability.
The IXTA6N50D2 is typically used in DC-DC switchmode power supplies, including buck, boost, flyback, and forward converters. This device can also be used in battery chargers and SMPS applications, providing synchronous rectification when driven by a PWM controller. It is also suitable for use in current regulators, due to its high power efficiency and fast switching characteristics. The IXTA6N50D2 is compatible with a wide range of operating voltages and can be used in automotive applications such as HVAC controls and solar inverters.
The IXTA6N50D2 is an ideal choice for a wide range of switchmode power supply applications. Its low power loss and wide operating voltage range make it highly efficient and reliable. Its integrated high-side driver also makes it easy to interface with a PWM controller. Its small size and versatility make it an ideal choice for a variety of applications, from automotive to industrial.
The specific data is subject to PDF, and the above content is for reference
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IXTA6N50D2 Datasheet/PDF