ZVN4306GVTA Discrete Semiconductor Products |
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Allicdata Part #: | ZVN4306GVTR-ND |
Manufacturer Part#: |
ZVN4306GVTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 2.1A SOT223 |
More Detail: | N-Channel 60V 2.1A (Ta) 3W (Ta) Surface Mount SOT-... |
DataSheet: | ZVN4306GVTA Datasheet/PDF |
Quantity: | 2000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 330 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
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Introduction
ZVN4306GVTA is a small signal N-Channel Enhancement Mode Field Effect Transistor (FET). It is from the Zetex ZVN series and features the typical Enhanced Mode characteristics such as fast switching time, low threshold voltage and low input capacitance. The ZVN4306GVTA is produced using a DMOS process featuring a low start-up voltage, low on-resistance and fast turn-off time. Due to its low gate threshold voltage, the ZVN4306GVTA can operate with a wide range of supply voltages, making it a good choice for applications requiring fast switching and good input/output isolation.
Applications
The ZVN4306GVTA is suitable for a wide range of applications including interface logic and power control. Its low on-resistance and fast switching speed makes it ideal for use in application such as power supply design, power management and motor control. It can also be used in switching applications that require low power dissipation, such as mobile and low-power devices. Additionally, it is suitable for use in high-speed switching applications such as digital signal processing, fiber optics and other data communication applications.
Working Principle
The ZVN4306GVTA is an N-Channel Enhancement Mode Field Effect Transistor (FET). It consists of a gate, a source and a drain. When the gate voltage is higher than the threshold voltage, the FET is said to be “on” and electrons are allowed to flow from the source to the drain. Conversely, when the gate voltage is lower than the threshold voltage the FET is said to be “off” and electrons are unable to flow. This makes the FET a good choice for switching applications where power dissipation is critical. The FET also exhibits good input/output isolation, which is critical in any high-speed switching application.
Conclusion
The ZVN4306GVTA is a small signal N-Channel Enhancement Mode Field Effect Transistor (FET). It features a low start-up voltage, low on-resistance and fast turn-off time, making it suitable for a wide range of applications including interface logic, power control, power management and motor control. Additionally, its low gate threshold voltage and good input/output isolation make it well suited for use in high-speed switching applications. By understanding its working principle, users can make more effective and efficient use of the device.
The specific data is subject to PDF, and the above content is for reference
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