| Allicdata Part #: | IXTA6N100D2-ND |
| Manufacturer Part#: |
IXTA6N100D2 |
| Price: | $ 4.87 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1000V 6A D2PAK |
| More Detail: | N-Channel 1000V 6A (Tc) 300W (Tc) Surface Mount TO... |
| DataSheet: | IXTA6N100D2 Datasheet/PDF |
| Quantity: | 70 |
| 1 +: | $ 4.42260 |
| 50 +: | $ 3.55370 |
| 100 +: | $ 3.23782 |
| 500 +: | $ 2.62182 |
| 1000 +: | $ 2.21117 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (IXTA) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 2650pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.2 Ohm @ 3A, 0V |
| Drive Voltage (Max Rds On, Min Rds On): | -- |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTA6N100D2 is a high power integrated circuit transistor that is designed to be used in a variety of applications. This article will discuss the IXTA6N100D2 application fields and its working principle.
The IXTA6N100D2 is classified under transistors, FETs and MOSFETs and as a single device. It is integrated circuits for high power applications. This type of transistor is made with a silicon substrate and is comprised of a field effect transistor. It is also part of a dual-gate type and has two separate gates that can be used independently.
The IXTA6N100D2 device is available in two types of packages, called “DIP” and “SOIC”. The most common type is the “DIP” package which can be mounted on a printed circuit board as it is relatively small in size. The “SOIC” package is slightly larger, is soldered onto the board, and is designed to dissipate more heat than the “DIP” package.
The IXTA6N100D2 is most commonly used in several applications including high power amplifiers, power supplies, load switch, motor drives, and audio applications. It can also be used in industrial process control, radio communication devices, and audio equipment.
The working principle of the IXTA6N100D2 is based upon two transistors which are connected to each other and to an external voltage. The two transistors are arranged in a series configuration, meaning that the two gates can be activated independently to control the current applied to the external power supply. This makes the IXTA6N100D2 a dual-mode transistor, meaning that it can be used either in an analog or a digital mode.
When in its digital mode, the IXTA6N100D2 acts as a switch that can be turned on and off very quickly in order to quickly regulate the amount of current in the circuit. When in its analog mode, the transistor can be used to amplify a small signal or to produce a signal of varying frequency or amplitude. It is also an ideal choice for controlling large motors as it can offer high speed switching with minimal noise.
The IXTA6N100D2 is a reliable and widely used transistor for high power applications. Its key feature is its dual-gate configuration which allows for greater control over the circuit, making it particularly useful in digital applications. As such, it is a great choice for a wide range of applications including amplifiers, power supplies, motor drives, and audio applications.
The specific data is subject to PDF, and the above content is for reference
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IXTA6N100D2 Datasheet/PDF