Cap alum 39uf 20% 400v thru hole - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRFD310PBF-ND	IRFD310PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 210mA, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	1416 Order	--
IRF740ALPBF-ND	IRF740ALPBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	746 Order	--
FQU5N40TU-ND	FQU5N40TU	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 3.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 1.7A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	3221 Order	--
TN2640N3-G-ND	TN2640N3-G	Microchip Technology	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 220mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1256 Order	1+: $0.9261 25+: $0.7721 100+: $0.7008
IRFU320PBF-ND	IRFU320PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1156 Order	--
IRFU310PBF-ND	IRFU310PBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	2750 Order	--
DN2540N3-G-ND	DN2540N3-G	Microchip Technology	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 120mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 (TO-226) Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1345 Order	--
TP2640N3-G-ND	TP2640N3-G	Microchip Technology	View more Packaging: Bulk Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 180mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	932 Order	--
DN2540N3-G-P003 -ND	DN2540N3-G-P003	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 120mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 (TO-226) Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	2000+: $0.3816
SIHF6N40D-E3-ND	SIHF6N40D-E3	Vishay Siliconix	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 100V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	1000 Order	1000+: $0.4358
TN2540N3-G-P002 -ND	TN2540N3-G-P002	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 175mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	2000+: $0.61
IRF720LPBF-ND	IRF720LPBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1000+: $0.6608
TP2540N3-G-P002 -ND	TP2540N3-G-P002	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 86mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Power Dissipation (Max): 740mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	2000+: $0.6878
JAN2N6768-ND	JAN2N6768	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/543 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-204AE	1000 Order	1+: $0
JAN2N6768T1-ND	JAN2N6768T1	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/543 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	1000 Order	1+: $0
JAN2N6800-ND	JAN2N6800	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/557 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34.75nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	1000 Order	1+: $0
JAN2N7227-ND	JAN2N7227	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/592 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 415 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	1000 Order	1+: $0
JANTX2N6768-ND	JANTX2N6768	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/543 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	1000 Order	--
JANTX2N6768T1-N D	JANTX2N6768T1	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/543 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-254-3, TO-254AA (Straight Leads)	1000 Order	1+: $0
JANTX2N6800-ND	JANTX2N6800	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/557 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34.75nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	1000 Order	--
JANTX2N7227-ND	JANTX2N7227	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/592 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 415 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	1000 Order	1+: $0
JANTXV2N6760-ND	JANTXV2N6760	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/542 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.22 Ohm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3	1000 Order	1+: $0
JANTXV2N6768-ND	JANTXV2N6768	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/543 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE (TO-3) Package / Case: TO-204AE	1000 Order	1+: $0
JANTXV2N6768T1- ND	JANTXV2N6768T1	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/543 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	1000 Order	1+: $0
JANTXV2N6800-ND	JANTXV2N6800	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/557 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 34.75nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	1000 Order	1+: $0
JANTXV2N7227-ND	JANTXV2N7227	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/592 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 415 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	1000 Order	1+: $0
2N7227U-ND	2N7227U	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 315 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	1000 Order	1+: $0
CLA4161-2-ND	CPC3909CTR	IXYS Integrated Circuits Division	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 9 Ohm @ 300mA, 0V Vgs (Max): 15V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -40C ~ 110C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	1000 Order	--
CLA4157-2-ND	CPC3909ZTR	IXYS Integrated Circuits Division	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 9 Ohm @ 300mA, 0V Vgs (Max): 15V FET Feature: Depletion Mode Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -40C ~ 110C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	1000+: $0.2782
FQB11N40CTMTR-N D	FQB11N40CTM	ON Semiconductor	View more Series: QFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 530 mOhm @ 5.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 25V Power Dissipation (Max): 135W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	800 Order	--
IRF730ASPBF-ND	IRF730ASPBF	Vishay Siliconix	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Power Dissipation (Max): 74W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	206 Order	1+: $1.6569 10+: $1.4994 100+: $1.2047 500+: $0.937 1000+: $0.7763
GP1M003A040CG-N D	GP1M003A040CG	Global Power Technologies Group	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
GP1M005A040CG-N D	GP1M005A040CG	Global Power Technologies Group	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 3.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 1.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 522pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
NDD03N40ZT4G-ND	NDD03N40ZT4G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 600mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 50V Power Dissipation (Max): 37W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
RJK4006DPD-00#J 2-ND	RJK4006DPD-00#J 2	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Power Dissipation (Max): 65W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
RJK4013DPE-00#J 3-ND	RJK4013DPE-00#J 3	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300 mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Power Dissipation (Max): 100W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LDPAK Package / Case: SC-83	1000 Order	1+: $0
STL3NK40-ND	STL3NK40	STMicroelectronics	View more Series: SuperMESH Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 430mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 2V @ 50A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFLAT (5x5) Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.8128
IRF730AS-ND	IRF730AS	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Power Dissipation (Max): 74W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRFR9310-ND	IRFR9310	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7 Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IRFR9310TR-ND	IRFR9310TR	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7 Ohm @ 1.1A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0

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