IRFD310PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFD310PBF is a single-channel enhancement mode, field effect transistor(FET), manufactured using the advanced high-voltage power MOSFET technology. It is housed in a compact Iris-HEP package that utilizes horizontal isolation technology.

Designed to be used in audio system and power amplifier applications, the IRFD310PBF is specially suited for high performance, high efficiency designs, with excellent thermal characteristics and superior strength when compared to most other FETs. Featuring a very low on-resistance of just 0.0021 Ω, this device offers peak current capability of up to 250 A at a typical gate drive of 3.3V, making it an ideal choice for high power audio amplifiers. Furthermore, it has a drain-source breakdown voltage of +100V and an additional benefit of only requiring very small input drive current to hold the device on.

The IRFD310PBF device is driven by a low-side gate driver and is suitable for high-frequency operations, such as switching current and voltage in Switch Mode Power Supplies (SMPS). It consists of an isolated metal-oxide-semiconductor field-effect transistor (MOSFET) die, but does not include the associated drive electronics. Additionally, its small size and low heat output allow it to be mounted into densely populated layouts, or free standing on the PC board surface.

The IRFD310PBF is designed to operate with a drain voltage from 0V to 100V, with a drain current from 0mA to 250mA. The gate voltage range is from ±10V, and the total gate charge, including gate-source capacitance and gate-drain capacitance, is typically only 50nC. Thanks to its small gate charge, the IRFD310PBF offers a very fast switching speed, with a turn-on propagation delay of only 7ns.

The IRFD310PBF device has a wide variety of applications, such as in switch mode converters, lighting control systems, power supplies, and DC to DC converters. In these applications, it serves as a switch to isolate or control the flow of current between the input and output circuits. When used as a switch, it allows the load current to be completely switched with minimal loss of power dissipation. Due to its ability to switch quickly, the IRFD310PBF is also useful in controlling the frequency of circuits, such as in frequency multipliers. Additionally, it can be used as a linear amplifier in amplifications of small signals in low-noise applications such as microphones or preamplifiers.

The principle of operation for the IRFD310PBF is based on the basic principles of FET transistors. It is a three terminal device, with a source, gate, and drain. When a voltage is applied to the gate relative to the source, it creates a field effect in the transistor, allowing current to flow from the source to the drain. This current flow can be controlled by the voltage applied to the gate, by allowing more or less current to flow depending on the gate voltage.

The IRFD310PBF is a superb device for high-power, high-speed applications, offering excellent thermal characteristics, high speed switching, and a very low on resistance of only 0.0021 Ω. Its small size, low power density, and small gate capacitance make it an ideal choice for a wide variety of applications, ranging from switch mode converters to frequency multipliers. Its ability to quickly switch current and voltage makes it an ideal choice for controlling devices in a variety of circuits.

The specific data is subject to PDF, and the above content is for reference