Allicdata Part #: | IRF730ASPBF-ND |
Manufacturer Part#: |
IRF730ASPBF |
Price: | $ 1.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 5.5A D2PAK |
More Detail: | N-Channel 400V 5.5A (Tc) 74W (Tc) Surface Mount D2... |
DataSheet: | IRF730ASPBF Datasheet/PDF |
Quantity: | 206 |
1 +: | $ 1.65690 |
10 +: | $ 1.49940 |
100 +: | $ 1.20469 |
500 +: | $ 0.93696 |
1000 +: | $ 0.77634 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3.3A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 74W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IRF730ASPBF is a type of field-effect transistor (FET), also classified as a single-channel Metal Oxide Semiconductor FET (MOSFET). IRF730ASPBF differs from a regular FET in that the gate electrode is insulated from the main current-carrying channel. This insulation factor allows the main current-carrying channel to switch on and off, in response to a signal applied to the gate.
IRF730ASPBF is a particularly popular transistor of the FET family, due to its relatively moderate specs in terms of power handling, frequency response and Vceo. The device has an on/off ratio of 60 which is considered as having a relatively low dynamic resistance. Its Pd (power dissipation) rating is 100W and its Vceo (collector to emitter voltage) is 500V, features which make it a suitable choice for applications that include switching, amplification, and low-noise, low-distortion generation.
The primary application of IRF730ASPBF is in the field of amplifier switching. This type of transistor can be used in amplifier circuits that work by switching off the current to the individual channel while the other channel is being used. This technique allows for much greater control of the signal, which is highly beneficial in audio systems. In addition to audio systems, the device can also be used in switching and control circuits as well, such as those found in power supplies, motor control, telecommunications, and other industrial applications.
The working principle of IRF730ASPBF is relatively straightforward. Its FET gate can be seen as a ‘gate’ that opens and closes the main current-carrying channel between the drain and the source. When the source is connected to the gate, the channel opens and current flows from the source to the drain. When the Gate is not connected to the source, the channel shuts off and no current can flow.
In termination, IRF730ASPBF is an excellent choice for FET applications as it offers a range of features that make it suitable for use in amplifiers and other control systems. Its relatively low power rating and dynamic resistance makes it a great option for low-noise, low-distortion circuits, while its collector-to-emitter voltage rating allows it to be used in more demanding applications. Its overall simplicity and lower cost also makes it a cost-effective choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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