FQB11N40CTM

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The FQB11N40CTM, or to put it more simply the FQ1140, is a power MOSFET (metal oxide semiconductor field effect transistor) that is designed for use in general purpose switching and linear applications that require an advanced level of functionality.

This MOSFET provides controllable on/off switching and can be used in a wide variety of electronic systems, including those used in solar power systems, semiconductor oscillators, power switching designs, and DC-to-DC converter designs.

In terms of its physical characteristics, the FQ1140 is a TO-263 package, which measures around 7.9 mm x 6.2 mm and has a maximum pin spacing of 1.3mm. It’s notable for its low RDS(on), or series resistance, which allows it to switch quickly and operate at very low levels of electric power.

The device also offers a maximum on-state drain current of 11A and a drain-source breakdown voltage of 40 volts. This is a particularly attractive feature for systems that need to handle higher peak switching currents or have larger voltage demands.

The FQ1140 is designed with a variety of purposes in mind, including power switching designs, power conversion, and motor control. In motor control applications, it can be used as a main switch, providing a fast response time and low switching losses while still maintaining a low on-state resistance.

It can also be used in battery-powered systems, where it can provide power on/off switching for low-voltage household appliances, or in DC-to-DC converter designs, where it provides a high-efficiency power conversion with low on-state losses.

One of the FQ1140’s main benefits is its low RDS(on) value. This low resistance allows it to operate at low voltage levels with a high switching speed, giving it the potential to increase efficiency in a wide range of circuit designs.

The FQ1140 is also rated for a Vds(max) or Drain-Source voltage of 40 volts, meaning it can handle a large amount of power and a wide range of voltages. In addition, its maximum drain current of 11A makes it a suitable choice for use in systems that require a fast response time and a high switching frequency.

The FQ1140’s internal circuitry is a unique combination of two transistor structures, allowing it to operate efficiently at higher frequencies and provide superior switching performance. The transistor design is based on a vertical DMOS structure, which offers a more efficient on-state resistance (RDS(on)), and a lateral DMOS structure, which allows the channel resistance to remain low.

The circular junction gate of the FQ1140 is designed to provide superior power dissipation and thermal performance, as well as improved electrostatic discharge (ESD) protection. This, along with its low RDS(on) value, makes it a suitable choice for applications with high switching speeds and high temperatures.

To summarize, the FQ1140 is a power MOSFET designed for general switching and linear applications. It’s designed with a combination of two transistor structures that provide superior switching performance, and the vertical DMOS structure allows for efficient on-state resistance and improved switching efficiency. It can handle a large amount of power and a wide range of voltages while still providing a fast response and low switching losses. With its excellent features, this MOSFET can be used in a wide variety of applications needing an advanced level of functionality.

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