![IRFR9310 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRFR9310-ND |
Manufacturer Part#: |
IRFR9310 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 400V 1.8A DPAK |
More Detail: | P-Channel 400V 1.8A (Tc) 50W (Tc) Surface Mount D-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 Ohm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFR9310 is a vertical power MOSFET. It is a high-current, high-voltage, low-on-resistance device that can efficiently switch large currents and withstand relatively high voltages. In order to fully take advantage of the IRFR9310 and other similar power MOSFETs, an understanding of the basic operating principles is necessary. This article will provide an overview of the IRFR9310\'s application field and working principle.
The IRFR9310 is primarily designed for power applications that require low-loss switching. Some typical applications include system power supplies, automotive systems, and controllers that use power MOSFETs for load switching or as switches for high-current signals. The IRFR9310 is also suitable for high-frequency switching applications, such as motor drives, solar inverters, and LED lighting.
To understand how the IRFR9310 works, it is important to understand the basic principles of MOSFETs. A MOSFET is a type of field-effect transistor that is based on the MOS (metal-oxide-semiconductor) structure. In theoro, it is a four-terminal device. One terminal is called the gate, two are called the source and the drain, and the fourth is the body, also called substrate. The MOSFET can be used to switch or amplify an electrical signal by adjusting its gate voltage.
The IRFR9310 is a vertical power MOSFET. This means that the current flows from the drain to the source between two vertical electrodes. Additionally the IRFR9310 is a high-voltage device; it can withstand up to 600 volts of drain-to-source voltage. The low-on-resistance of the IRFR9310 helps minimize losses when switching large currents.
To use the IRFR9310, its gate must be controlled by an external voltage source. When the gate voltage is below a certain threshold (which is usually about 3 volts for the IRFR9310), the MOSFET is off. Above this threshold, the MOSFET is on and the drain current can flow to the gate. In order to turn off the MOSFET, it is necessary to drop the gate voltage below the threshold level.
The IRFR9310 also has several protection features. It has a rated dielectric withstanding voltage of up to 600 volts, which helps protect the MOSFET from overvoltage stresses. The device also has a temperature-dependent current limit that helps protect it from thermal runaway. In addition, the IRFR9310 also has an internal body diode that helps reduce switching losses.
In conclusion, the IRFR9310 is a vertical power MOSFET that is well-suited for use in power applications. Its low-on-resistance and temperature-dependent current limit make it a reliable device for switching large currents or controlling high-frequency signals. With an understanding of its basic operating principles, a wide range of applications can be realized.
The specific data is subject to PDF, and the above content is for reference
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