
Allicdata Part #: | JAN2N6768-ND |
Manufacturer Part#: |
JAN2N6768 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH TO-204AE TO-3 |
More Detail: | N-Channel 400V 14A (Tc) 4W (Ta), 150W (Tc) Through... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 14A, 10V |
Package / Case: | TO-204AE |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Series: | Military, MIL-PRF-19500/543 |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The JAN2N6768 is a type of Field Effect Transistor (FET), or more specifically an enhancement mode Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). As its name implies, a FET is a type of transistor that works by controlling the movement of electric charges through its gate electrode. It belongs to the class of single FETs, as it only has one distinct gate electrode. The single FET is the most basic form of FET and is the starting point for any other more complex kinds.
The JAN2N6768 is primarily used in switching applications, especially in controlling power from the supply source. This FET is able to both switch and vary the current through its channel by the voltage applied to its gate electrode. When an appropriate signal is received by the gate electrode, an electric field is generated that then controls the current flowing through the channel. In this way, the signal voltage will determine the amount of current that is allowed to flow. Due to this, the JAN2N6768 is often used to control power output and electricity flow in many different electrical circuits.
In addition to its use in switching, the JAN2N6768 can also be used in amplification applications. This is because it works by altering the resistance of the channel connecting its output and input terminal. When a positive voltage is applied to the gate terminal, the electric field that is created reduces the resistance of the channel. This in turn allows more current to flow through the output terminal. As a result, the signal that is in the input terminal can be amplified through the output terminal.
The JAN2N6768 is able to reach high levels of current switching and amplification due to its advanced construction and materials used in its construction. It is composed primarily of an N-type semiconductor material made of Silicon or Germanium. It also features a source and drain terminal in addition to the gate electrode. The source and drain terminal each hold their own electron carriers, either electrons or holes, which then form a channel between them when the gate voltage is applied. This channel is then used to control the amount of current that passes through the FET.
The advanced construction of the JAN2N6768 makes it one of the most popular and reliable FETs on the market. Its ability to switch and amplify both large and small amounts of current make it an ideal choice for controlling power in both consumer and commercial devices. Its low cost and robust construction have also made it a popular choice for many engineers and circuit designers who require reliable and cost-effective power controls.
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