
Allicdata Part #: | IRF720LPBF-ND |
Manufacturer Part#: |
IRF720LPBF |
Price: | $ 0.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 3.3A TO-262 |
More Detail: | N-Channel 400V 3.3A (Tc) 3.1W (Ta), 50W (Tc) Throu... |
DataSheet: | ![]() |
Quantity: | 1000 |
1000 +: | $ 0.66078 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 410pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.3A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRF 720LPBF is a 30V N-channel MOSFET which offers high performance, improved reliability and low-power consumption benefits. It is specially designed to meet the miniaturization requirements of today’s electronic devices while still providing excellent switching performance. The device is typically used in data and power applications and is suitable for load switching, motor control and power management applications.
The IRF 720LPBF features an integrated logic-level gate, which helps to reduce noise, power dissipation and switching time. It also features a low-power threshold voltage that allows it to switch at lower power levels. The device also has a low on-resistance which allows for higher current levels to be passed through the device.
Application field of FET:
- Load switching applications
- Motor control applications
- Power management applications
- Data processing applications
- Power supply applications
Working principle of FET:
The working principle of a FET is based on the application of a voltage or an electric field between the gate and the source of the device. This applied voltage or electric field creates a conductive channel between the source and drain of the device. When the gate voltage is removed, the channel breaks down, providing an effective switch for controlling electrical signals.
The amount of current that can flow through the device is determined by the size of the channel created between the source and drain. The size of the channel is determined by the voltage applied to the gate electrode. This is the basic concept of a FET, which is why the characteristics of the device are highly dependent on the gate voltage.
The IRF 720LPBF has a high on-state current rating of 3A and a low on-state resistance of 0.010 ohms. This makes it ideal for applications such as motor controllers, power supplies, data processing, and load switching. The device’s low-power threshold voltage allows for low-power switching, which helps to reduce overall system power consumption.
The IRF 720LPBF is a versatile FET that offers a wide range of features and benefits. Its integrated logic-level gate helps to reduce noise and power dissipation, while its low on-resistance allows for higher current levels. The device is ideal for applications that require efficient, reliable and low-power switching.
The specific data is subject to PDF, and the above content is for reference
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