Cap alum poly 180uf 20% 25v - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
FDPC8012STR-ND	FDPC8012S	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 13A, 26A Rds On (Max) @ Id, Vgs: 7 mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V Power - Max: 800mW, 900mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Powerclip-33	3000 Order	--
FDPC8011SFSTR-N D	FDPC8011S	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 13A, 27A Rds On (Max) @ Id, Vgs: 6 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 13V Power - Max: 800mW, 900mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Powerclip-33 Base Part Number: FDPC8011S	9000 Order	--
FDMS3600SFSTR-N D	FDMS3600S	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 15A, 30A Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 13V Power - Max: 1W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56 Base Part Number: FDMS3600S	9000 Order	--
SIZ322DT-T1-GE3 TR-ND	SIZ322DT-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Rds On (Max) @ Id, Vgs: 6.35 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V Power - Max: 16.7W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	3000 Order	3000+: $0.2439
SIZ320DT-T1-GE3 TR-ND	SIZ320DT-T1-GE3	Vishay Siliconix	View more Series: PowerPAIR, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 30A (Tc), 40A (Tc) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V Power - Max: 16.7W, 31W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	3000 Order	3000+: $0.2511
SIZ926DT-T1-GE3 TR-ND	SIZ926DT-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 40A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V Power - Max: 20.2W, 40W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair (6x5)	6000 Order	3000+: $0.3793
SIZ728DT-T1-GE3 TR-ND	SIZ728DT-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 16A, 35A Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 12.5V Power - Max: 27W, 48W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair Supplier Device Package: 6-PowerPair Base Part Number: SIZ728	3000 Order	3000+: $0.4382
FDPC8016STR-ND	FDPC8016S	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 20A, 35A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Power - Max: 2.1W, 2.3W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	136 Order	--
FDPC8014STR-ND	FDPC8014S	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 20A, 41A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Power - Max: 2.1W, 2.3W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	1000 Order	--
IRFH4253DTRPBFT R-ND	IRFH4253DTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 64A, 145A Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Power - Max: 31W, 50W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PQFN (5x6)	1000 Order	--
FDG8842CZTR-ND	FDG8842CZ	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 25V Current - Continuous Drain (Id) @ 25C: 750mA, 410mA Rds On (Max) @ Id, Vgs: 400 mOhm @ 750mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Power - Max: 300mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	1000 Order	--
BSC0911NDATMA1T R-ND	BSC0911NDATMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 18A, 30A Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V Power - Max: 1W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	1000 Order	5000+: $0.5298
FDG6303N_G-ND	FDG6303N_G	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 500mA Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 300mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	1000 Order	1+: $0
SIZ328DT-T1-GE3 TR-ND	SIZ328DT-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Gen IV Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	1000 Order	3000+: $0.2521
FDG6304P-F169-N D	FDG6304P-F169	ON Semiconductor	View more Part Status: Last Time Buy FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 410mA (Ta) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Power - Max: 300mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	1000 Order	1+: $0
FDG6321C-F169-N D	FDG6321C-F169	ON Semiconductor	View more Part Status: Last Time Buy FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 500mA (Ta), 410mA (Ta) Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, 1.1 Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V, 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 62pF @ 10V Power - Max: 300mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	1000 Order	1+: $0
296-49054-2-ND	CSD86336Q3DT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.9V @ 250A, 1.6V @ 250A Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 45V, 7.4nC @ 45V Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 12.5V, 970pF @ 12.5V Power - Max: 6W Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	500 Order	250+: $0.8738 500+: $0.7645 750+: $0.6903 1250+: $0.6335
296-49071-2-ND	CSD86356Q5DT	Texas Instruments	View more Series: NexFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 5V, 0.8 mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 1.85V @ 250A, 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1.04nF @ 12.5V, 2.51nF @ 12.5V Power - Max: 12W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON-CLIP (5x6)	500 Order	250+: $1.3693 500+: $1.1982 750+: $1.0818 1250+: $0.9927
APTM50DUM17G-ND	APTM50DUM17G	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 180A Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Power - Max: 1250W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	1000 Order	1+: $0
APTM50AM17FG-ND	APTM50AM17FG	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 180A Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Power - Max: 1250W Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	1000 Order	100+: $125.8
TSM200N03DPQ33R GGTR-ND	TSM200N03DPQ33 RGG	Taiwan Semiconductor Corporation	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Power - Max: 20W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PDFN (3x3)	1000 Order	5000+: $0.0993
BSO4804XTINTR-N D	BSO4804T	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 30A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: BSO4804	1000 Order	1+: $0
BSO4804HUMA2-ND	BSO4804HUMA2	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 30A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power - Max: 2W Operating Temperature: -55C ~ 150C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	1000 Order	1+: $0
BSO4804INTR-ND	BSO4804	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 30A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: BSO4804	1000 Order	--
FMM110-015X2F-N D	FMM110-015X2F	IXYS	View more Series: GigaMOS, HiPerFET, TrenchT2 Packaging: Tube Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 53A Rds On (Max) @ Id, Vgs: 20 mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V Power - Max: 180W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac-5 Supplier Device Package: ISOPLUS i4-PAC Base Part Number: FMM	1000 Order	25+: $10.2803
DMC3025LSDQ-13D ITR-ND	DMC3025LSDQ-13	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6.5A (Ta), 4.2A (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.4A, 10V, 45 mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 4.6nC, 5.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 501pF, 590pF @ 15V, 25V Power - Max: 1.2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	1000 Order	2500+: $0.1773
497-2470-2-ND	STS8DNF3LL	STMicroelectronics	View more Series: STripFET II Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Power - Max: 1.6W Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: ST*8DNF	1000 Order	--
BUK9MJT-55PRF,5 18-ND	BUK9MJT-55PRF,5 18	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 10A, 10V Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	1000 Order	1+: $0
TC6321T-V/9UTR- ND	TC6321T-V/9U	Microchip Technology	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA, 2.4V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 200pF @ 25V Operating Temperature: -55C ~ 175C Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFN (6x5)	1000 Order	3300+: $0.7008
FMP76-01T-ND	FMP76-01T	IXYS	View more Part Status: Active FET Type: N and P-Channel, Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 54A (Tc), 62A (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 38A, 10V, 11 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250A, 4.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V, 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V, 5080pF @ 25V Power - Max: 89W, 132W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak Supplier Device Package: ISOPLUS i4-PAC	1000 Order	25+: $9.2081
SQJ244EP-T1_GE3 TR-ND	SQJ244EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 4A, 10V, 4.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V, 2800pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK SO-8 Dual Supplier Device Package: PowerPAK SO-8 Dual Asymmetric	1000 Order	3000+: $0.3591
SQJ504EP-T1_GE3 TR-ND	SQJ504EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 8A, 10V, 17 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V, 4600pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerPAK SO-8 Dual	1000 Order	3000+: $0.3895
DMC62D0SVQ-7DIT R-ND	DMC62D0SVQ-7	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25C: 571mA (Ta), 304mA (Ta) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 500mA, 10V, 6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 26pF @ 25V Power - Max: 510mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	1000 Order	--
SQJ570EP-T1_GE3 TR-ND	SQJ570EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 15A (Tc), 9.5A (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 600pF @ 25V Power - Max: 27W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK SO-8 Dual Supplier Device Package: PowerPAK SO-8 Dual	1000 Order	3000+: $0.2921
SQJ262EP-T1_GE3 TR-ND	SQJ262EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 15A (Tc), 40A (Tc) Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 2A, 10V, 15.5 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK SO-8 Dual Supplier Device Package: PowerPAK SO-8 Dual Asymmetric	1000 Order	3000+: $0.3286
SQJ990EP-T1_GE3 TR-ND	SQJ990EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 34A (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V Power - Max: 48W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK SO-8 Dual Supplier Device Package: PowerPAK SO-8 Dual Asymmetric	1000 Order	3000+: $0.3408
SQJ260EP-T1_GE3 TR-ND	SQJ260EP-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 20A (Tc), 54A (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 6A, 10V, 8.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V, 2500pF @ 25V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK SO-8 Dual Supplier Device Package: PowerPAK SO-8 Dual Asymmetric	1000 Order	3000+: $0.3591
RJM0603JSC-00#1 3-ND	RJM0603JSC-00#1 3	Renesas Electronics America	View more Series: Automotive, AEC-Q101 Part Status: Obsolete FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 20A Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V Power - Max: 54W Operating Temperature: 175C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Supplier Device Package: 20-HSOP	1000 Order	1+: $0
RJM0603JSC-00#1 2-ND	RJM0603JSC-00#1 2	Renesas Electronics America	View more Series: Automotive, AEC-Q101 Packaging: Tray Part Status: Active FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 20A Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V Power - Max: 54W Operating Temperature: 175C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Supplier Device Package: 20-HSOP	1000 Order	1+: $0
KGF16N05D-400-N D	KGF16N05D-400	Renesas Electronics America Inc.	View more Part Status: Active FET Type: 2 N-Channel (Dual) Common Source FET Feature: Standard Drain to Source Voltage (Vdss): 5.5V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 0.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5V Power - Max: 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 20-UFLGA, CSP Supplier Device Package: 20-WLCSP (2.48x1.17)	1000 Order	1+: $0

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