CSD86336Q3DT Discrete Semiconductor Products |
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Allicdata Part #: | 296-49054-2-ND |
Manufacturer Part#: |
CSD86336Q3DT |
Price: | $ 0.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | SYNCHRONOUS BUCK NEXFET POWER BL |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 25V 20A (Ta... |
DataSheet: | CSD86336Q3DT Datasheet/PDF |
Quantity: | 500 |
250 +: | $ 0.87376 |
500 +: | $ 0.76453 |
750 +: | $ 0.69026 |
1250 +: | $ 0.63347 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Logic Level Gate, 5V Drive |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Rds On (Max) @ Id, Vgs: | 9.1 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: | 1.9V @ 250µA, 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.8nC @ 45V, 7.4nC @ 45V |
Input Capacitance (Ciss) (Max) @ Vds: | 494pF @ 12.5V, 970pF @ 12.5V |
Power - Max: | 6W |
Operating Temperature: | -55°C ~ 125°C |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSON (3.3x3.3) |
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The CSD86336Q3DT is a device from the family of Power MOSFETs and FETs from Texas Instruments. It is an advanced, high power, low on-resistance, dual N-channel, Depletion/Enhancement mode, logic level, array-style MOSFETs. The device is ideal for power applications that require higher current capability compared to conventional MOSFETs. It has a variety of applications such as DC/DC power conversion, low-noise efficient power supply and voltage regulation of various kinds.
Application Field
The most common application field of the CSD86336Q3DT is in high power switching applications. It is commonly used in DC/DC power converters, low-noise efficient power supplies, and various kinds of voltage regulators. It can also be used in various power management applications such as DC motors control, high voltage/current regulators and battery charging.
The device is also well suited for use in high power audio amplifiers, RF power amplifiers, and RF power switches. In addition, this device can be used as a switch in switching systems such as power switches, LED lighting systems, LED illumination systems, and solar inverters.
Working Principle
The CSD86336Q3DT consists of two N-channel depletion/enhancement mode, logic level MOSFETs in an array form factor. The device has a relatively low on-resistance with low gate drive requirements which make it ideal for use in high current circuits. The device is designed to minimize gate charge and minimize gate to source threshold voltage. It is designed to have a single gate voltage that controls the current through the channels. The gate voltage can be varied to control the current flow in both directions.
This device is also very efficient and is typically used in power circuits allowing for higher current capability compared to conventional MOSFETs. It also offers enhanced ESD (electrostatic discharge) protection. When used in inverters and other switching systems, the device has excellent thermal and electrical performance.
The CSD86336Q3DT also offers high speed switching operation and high switching efficiency. It is designed to operate in both cold and hot temperatures with minimal breakdown voltage. The device is available in a variety of packages, including SOT-223, LFPAK, and TSSOP. The SOT-223 package is the most common package for this device.
In conclusion, the CSD86336Q3DT is an advanced, high power, low on-resistance, dual N-channel, Depletion/Enhancement mode, logic level MOSFETs array. It is well suited for use in high power switching applications in areas such as DC/DC power converters, low-noise efficient power supplies, and various kinds of voltage regulators. In addition, it can be used in a variety of power management applications. The device is available in a variety of packages and offers excellent thermal and electrical performance and high switching efficiency.
The specific data is subject to PDF, and the above content is for reference
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