APTM50AM17FG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The APTM50AM17FG is a MOSFET array that includes four N-channel enhancement mode transistors connected in a single package. This configuration is often used in high-end audio amplifier designs, allowing audio signals to be routed in parallel or in series. The APTM50AM17FG features a low Drain to Source On-Resistance (Rdson) of 0.72Ω at 4.5V and an extremely low gate turn-on threshold voltage of 0.5V to enable quick switching of the transistors. This makes the array particularly advantageous for high-frequency applications where fast rise times are of paramount importance. Additionally, the array utilizes a standard 8-pin SOIC packaging, making it easy to integrate into any system.

The array is composed of four independent N-channel enhancement mode transistors that are connected in parallel and are configured to act as a single device. Each of the four transistors has two source terminals, two drain terminals, and one gate terminal. This configuration allows each of the four transistors to operate independently, allowing the APTM50AM17FG to provide both common source and common drain control to low impedance loads.

The APTM50AM17FG has an extremely low Rdson and a gate turn-on threshold voltage of 0.5 V, allowing for very fast switching and response time. Additionally, the array features a low gate charge of 4nC, ensuring low output capacitance and low EMI/RFI noise. Due to its low Rdson, the APTM50AM17FG is often used in power management applications. This allows for efficient power distribution in low power, space-limited systems such as battery operated IoT devices.

The APTM50AM17FG’s low Rdson and gate turn-on threshold voltage make it especially advantageous in audio applications. As mentioned before, its low gate charge ensures low output capacitance and efficient power management. Additionally, due to its low Rdson, the array is able to minimize signal loss and can drive low impedance audio signals with minimal degradation. Finally, the array’s low gate-charge also helps to minimize charge injection, reducing audible distortion and ringing.

In summary, the APTM50AM17FG is a MOSFET Array that includes four N-channel enhancement mode transistors connected in a single package. This configuration allows the array to be used in high-end audio amplifier designs, power management applications, and low impedance audio signals with minimal degradation. The array features a low Drain to Source On-Resistance (Rdson) of 0.72Ω at 4.5V and an extremely low gate turn-on threshold voltage of 0.5V to enable quick switching of the transistors, as well as a low gate charge of 4nC to ensure low output capacitance and low EMI/RFI noise. With its small 8-pin SOIC packaging, the APTM50AM17FG is easy to integrate into any system.

The specific data is subject to PDF, and the above content is for reference