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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
FF401R17KF6C_B2 -ND	FF401R17KF6C_B2	Infineon Technologies	View more Part Status: Active Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 650A Power - Max: 3150W Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 400A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 27nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	4+: $548.673
FF1200R12KE3NOS A1-ND	FF1200R12KE3NOS A1	Infineon Technologies	View more Part Status: Active Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200V Power - Max: 5000W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1200A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 86nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	2+: $622.144
IRF7317PBFTR-ND	IRF7317TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6.6A, 5.3A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: IRF7317PBF	4000 Order	--
FS400R07A1E3H5B PSA1-ND	FS400R07A1E3H5B PSA1	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
FF800R17KE3B2NO SA1-ND	FF800R17KE3B2NO SA1	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
IRF6218STRLPBFT R-ND	IRF6218STRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	7200 Order	--
IRF7749L1TRPBFT R-ND	IRF7749L1TRPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 33A (Ta), 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 120A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 12320pF @ 25V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET Isometric L8	6862 Order	1+: $10
BCX70KE6327HTSA 1TR-ND	BCX70KE6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Power - Max: 330mW Frequency - Transition: 250MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BCX70	12000 Order	3000+: $0.024 6000+: $0.0216 15000+: $0.0188 30000+: $0.0169 75000+: $0.015 150000+: $0.0125
BCR505E6327HTSA 1TR-ND	BCR505E6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BCR505	1000 Order	3000+: $0.0403 6000+: $0.0351 15000+: $0.0298 30000+: $0.028 75000+: $0.0263
IRFR3709ZPBFTR- ND	IRFR3709ZTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2000 Order	--
BFP460E6433HTMA 1TR-ND	BFP460E6433HTMA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.8V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz Gain: 12.5dB ~ 26.5dB Power - Max: 230mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4 Base Part Number: BFP460	1000 Order	1+: $0
BFP640H6433-ND	BFP 640 H6433	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Gain: 24dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4 Base Part Number: BFP640	1000 Order	1+: $0
BFR183WH6327XTS A1TR-ND	BFR183WH6327XTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 18.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Base Part Number: BFR183	1000 Order	1+: $0
BCR103L3E6327-N D	BCR 103L3 E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 140MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4	1000 Order	1+: $0
BCR116SH6727-ND	BCR 116S H6727	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BCR116S	1000 Order	1+: $0
IRFHM8363TRPBF- ND	IRFHM8363TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 11A Rds On (Max) @ Id, Vgs: 14.9 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V Power - Max: 2.7W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Base Part Number: IRFHM8363PBF	1000 Order	--
94-3449-ND	94-3449	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 3.4A Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	1000 Order	1+: $0
IRF7754TR-ND	IRF7754TR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 5.5A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V Power - Max: 1W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	1000 Order	1+: $0
IPB014N06NATMA1 TR-ND	IPB014N06NATMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 34A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.8V @ 143A Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 30V Power Dissipation (Max): 3W (Ta), 214W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, DPak (6 Leads + Tab)	1000 Order	1000+: $1.3833
IPB144N12N3GATM A1TR-ND	IPB144N12N3GATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25C: 56A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 56A, 10V Vgs(th) (Max) @ Id: 4V @ 61A Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 60V Power Dissipation (Max): 107W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	6000 Order	1000+: $0.5721
IRF7402PBFTR-ND	IRF7402TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	4000 Order	--
AUIRF2804L-ND	AUIRF2804L	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	236 Order	--
IRF6619TR1PBFTR -ND	IRF6619TR1PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 30A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.45V @ 250A Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5040pF @ 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET MX Package / Case: DirectFET Isometric MX	2000 Order	--
AUIRGP35B60PD-E -ND	AUIRGP35B60PD-E	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A Power - Max: 308W Switching Energy: 220J (on), 215J (off) Input Type: Standard Gate Charge: 55nC Td (on/off) @ 25C: 26ns/110ns Test Condition: 390V, 22A, 3.3 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	1000 Order	1+: $5.67 10+: $5.1213 100+: $4.2401 500+: $3.6922
IPB65R045C7ATMA 1TR-ND	IPB65R045C7ATMA 1	Infineon Technologies	View more Series: CoolMOS C7 Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.9A, 10V Vgs(th) (Max) @ Id: 4V @ 1.25mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V Power Dissipation (Max): 227W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRL60SL216-ND	IRL60SL216	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 255nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 15330pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	764 Order	1+: $5.2731 10+: $4.7471 100+: $3.9034 500+: $3.2704
BSZ088N03MSGATM A1TR-ND	BSZ088N03MSGATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 11A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Power Dissipation (Max): 2.1W (Ta), 35W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	5000 Order	5000+: $0.2147
IRLZ44ZSTRLPBFT R-ND	IRLZ44ZSTRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V Power Dissipation (Max): 80W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	800 Order	800+: $0.4082
IRLH6224TRPBFTR -ND	IRLH6224TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 28A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 50A Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 10V Power Dissipation (Max): 3.6W (Ta), 52W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	1000 Order	--
AUIRF8739L2TR-N D	AUIRF8739L2TR	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 57A (Ta), 545A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.6 mOhm @ 195A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250A Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Vgs (Max): 40V Input Capacitance (Ciss) (Max) @ Vds: 17890pF @ 25V Power Dissipation (Max): 3.8W (Ta), 340W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET Isometric L8	1000 Order	4000+: $2.0545
IPB65R110CFDAAT MA1TR-ND	IPB65R110CFDAAT MA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, CoolMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V Power Dissipation (Max): 277.8W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $2.5534
IPB020N10N5LFAT MA1TR-ND	IPB020N10N5LFAT MA1	Infineon Technologies	View more Series: OptiMOS-5 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.1V @ 270A Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 50V Power Dissipation (Max): 313W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $2.6074
IRFS7437TRL7PPT R-ND	IRFS7437TRL7PP	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 150A Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7437pF @ 25V Power Dissipation (Max): 231W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, DPak (7 Leads + Tab), TO-263CA	1000 Order	--
IPP80R900P7XKSA 1-ND	IPP80R900P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 110A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	405 Order	1+: $1.1214 10+: $0.9916 100+: $0.7838 500+: $0.6079 1000+: $0.4799
IPW80R360P7XKSA 1-ND	IPW80R360P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 280A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V Power Dissipation (Max): 84W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	114 Order	1+: $2.0538 10+: $1.8314 240+: $1.5016 720+: $1.2159 1200+: $1.0255
AIHD15N60RFATMA 1-ND	AIHD15N60RFATMA 1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant IGBT Type: Trench Field Stop Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 240W Switching Energy: 270J (on), 250J (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25C: 13ns/160ns Test Condition: 400V, 15A, 15 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	1000 Order	2500+: $0.7022
IGP30N65F5XKSA1 -ND	IGP30N65F5XKSA1	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 188W Switching Energy: 280J (on), 70J (off) Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25C: 19ns/170ns Test Condition: 400V, 15A, 23 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO-220-3	1000 Order	500+: $1.028
IGW03N120H2FKSA 1-ND	IGW03N120H2FKSA 1	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 9.6A Current - Collector Pulsed (Icm): 9.9A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Power - Max: 62.5W Switching Energy: 290J Input Type: Standard Gate Charge: 22nC Td (on/off) @ 25C: 9.2ns/281ns Test Condition: 800V, 3A, 82 Ohm, 15V Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	1000 Order	240+: $1.3898
IGW20N60H3FKSA1 -ND	IGW20N60H3FKSA1	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: 170W Switching Energy: 800J Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25C: 17ns/194ns Test Condition: 400V, 20A, 14.6 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	77 Order	1+: $1.8522 10+: $1.6657
IPA90R340C3XKSA 1-ND	IPA90R340C3XKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Power Dissipation (Max): 35W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $4.3911 10+: $3.9211 100+: $3.2155 500+: $2.6038 1000+: $2.196

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