IRF7754TR Allicdata Electronics
Allicdata Part #:

IRF7754TR-ND

Manufacturer Part#:

IRF7754TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 12V 5.5A 8-TSSOP
More Detail: Mosfet Array 2 P-Channel (Dual) 12V 5.5A 1W Surfac...
DataSheet: IRF7754TR datasheetIRF7754TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Description

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The IRF7754TR is an array of Field Effect Transistors (FETs) that can be used in a broad range of applications. These include power conversion and control, computer hardware, and industrial process automation. FETs are a unique type of semiconductor component which utilize a voltage-controlled gate terminal to modulate the drain-source current flow and can be configured in various circuit configurations.

The IRF7754TR array consists of four, three-terminal FETs. Each FET is rated for 200V and 0.5A of drain current and can handle up to 10V of gate voltage. The FETs have an on-resistance of 6.3 Ω and a maximum voltage rating of 30V. The FETs are arranged in a chip package that measures 4.4 x 2.4mm.

In operation, the IRF7754TR array works by controlling the drain-source current flow of each FET with a gate voltage. A gate control terminal is provided that can be charged or discharged to determine the flow of current through the FETs. When the gate control terminal is charged, the FETs are “on” and current will flow from the drain to the source. When the gate is discharged, the FETs are “off” and no current will flow.

The IRF7754TR is an ideal choice for applications that require reliable, low-power operation. It is capable of switching power up to 200V at 0.5A with a maximum on-state resistance of 6.3 Ω. Additionally, the chip package is small, making it suitable for applications where space is at a premium. The IRF7754TR also has a fast response time and low power consumption which make it an ideal choice for power control and automation applications.

The IRF7754TR is an ideal choice for applications that require reliable, low-power operation and high endurance. It has a wide range of applications including power conversion, control, and process automation. The FETs have an on-resistance of 6.3 Ω and can handle up to 10V of gate voltage. Additionally, the chip package is small, making it suitable for applications where space is at a premium.

In conclusion, the IRF7754TR is a four-FET transistor array that can be used in many low-power applications that require reliable operation. It has a wide range of applications including power conversion and control, computer hardware, and industrial process automation. The FETs have an on-resistance of 6.3Ω and can handle up to 10V of gate voltage. Additionally, the chip package is small, making it suitable for applications where space is at a premium. The IRF7754TR provides reliable performance and is a great choice for any number of applications where power control and automation are needed.

The specific data is subject to PDF, and the above content is for reference

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