IPB014N06NATMA1

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The IPB014N06NATMA1 is a high-performance enhancement-mode Field-Effect Transistor (FET) with a 500V drain-source breakdown voltage. It is a low-threshold vertical D-MOS transistor, which is capable of providing 3A continuous drain current transfer for high efficiency in applications that require low input power and low drive voltage. It is optimized for on-state resistance and featuring low gate-charge and fast switching capability. This versatile and fast-switching FET is ideal for high-efficiency amplifier and switching applications.

The IPB014N06NATMA1 can be classified as an Enhancement-Mode MOSFET (EMOSFET), as it is constructed with an N-channel MOSFET structure. It uses an insulated-gate electrode which is electrically isolated from the field region. An additional gate terminal is connected to the source terminal to increase the gate voltage when it is taken on a negative polarity. Thus, by controlling the gate voltage, the device can be switched on or off.

The working principle of this field-effect transistor follows that of an N-Channel Enhancement-Mode Field-Effect Transistor (NMOSFET). When a negative gate voltage is applied, the source-drain path is turned ON, allowing current to flow from the drain to the source. This operation occurs when the gate voltage is held more negative than the source voltage by a gate-source voltage threshold amount. When the gate voltage is reduced below this value, the source-drain path is put into cutoff state, disallowing any current flow.

The IPB014N06NATMA1 can be used in a wide range of applications, such as DC-DC converters, load amplifiers, power switching applications, and low-noise signal amplification. It is also well suited for high-efficiency switching, high-voltage, and high-current applications, making it an ideal choice for a variety of power signal control and applications.

This single FET is ideal for usage as a power switch in various power supply designs, as its drain-source voltage rating of 500V makes it a good choice for high-powers situations. It has a fast switching time, allowing for higher efficiency in the circuits it is used in. In addition, its low gate-charge and low input capacitance make it an attractive choice for applications that require low power and low drive voltages.

The IPB014N06NATMA1 is a great choice for amplifier, power switching, and other high-power applications, due to its fast switching times, low on-state resistance, and high drain-source voltage rating. Its fast switching times and low on-state resistance make it ideal for achieving higher efficiency in applications that require low input power and low drive voltage.

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