IRL60SL216 Allicdata Electronics
Allicdata Part #:

IRL60SL216-ND

Manufacturer Part#:

IRL60SL216

Price: $ 5.80
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 195A
More Detail: N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-...
DataSheet: IRL60SL216 datasheetIRL60SL216 Datasheet/PDF
Quantity: 764
1 +: $ 5.27310
10 +: $ 4.74705
100 +: $ 3.90335
500 +: $ 3.27038
Stock 764Can Ship Immediately
$ 5.8
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 15330pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 255nC @ 4.5V
Series: HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRL60SL216 is a Logic Level Enhancement Power MOSFET from Vishay, a major electronics component manufacturer. The IRL60SL216 is part of the DirectFET family, a series of gate-controlled FETs that are used in a broad range of applications, from power management systems to motor control and audio power management. The IRL60SL216 is a surface-mount, single-gate FET with a single drain and source, and offers excellent performance and reliability in a wide variety of applications.

The IRL60SL216 offers several features that can make it a good choice for various applications. It has an extremely low on-resistance, meaning that it can handle very high currents with minimal power consumption. It also exhibits excellent off-state leakage characteristics, which make it suitable for battery-operated designs. Additionally, the relatively low input capacitance of the FET makes it suitable for high-speed switching applications. The FET also features high ESD and surge ratings, making it suitable for a wide range of harsh conditions.

The IRL60SL216 is ideal for a wide range of applications, from motor control to audio power management. In motor control applications, the MOSFET can block and switch very high currents, making it an ideal choice for drives, relays, and other motor control devices. In audio power management, the IRL60SL216 can be used for low-noise audio power amplifiers, headphone amplifiers, and audio switching devices. Additionally, this FET can be used for power management in display systems, test and measurement equipment, and gaming consoles.

The working principle of the IRL60SL216 is the same as any other gate-controlled FET, in that it is designed to act as an artificial \'resistor\' or \'switch\' between the input and output sides of the FET. The gate of the FET is connected directly to the input voltage, which then switches the FET between an open and closed state, modulated by the amount of voltage applied to the gate. When the gate is at zero volts, the FET is in the off-state, meaning that no current is allowed to pass through the FET. When the gate is supplied with a positive voltage, the FET is in the on-state, allowing current to pass through the FET.

The IRL60SL216 is an extremely versatile and reliable FET, and is suitable for a wide range of applications. Its low on-resistance, excellent off-state leakage characteristics, high ESD and surge ratings, and relatively low input capacitance make it an ideal choice for high-current applications such as motor control and power management. Additionally, its ability to switch quickly and reliably makes it suitable for a variety of audio power management and related applications. The IRL60SL216 is a highly reliable, versatile, and efficient FET, ideal for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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