IPB65R110CFDAATMA1

Vgs(th) (Max) @ Id:	4.5V @ 1.3mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	277.8W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3240pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	118nC @ 10V
Series:	Automotive, AEC-Q101, CoolMOS™
Rds On (Max) @ Id, Vgs:	110 mOhm @ 12.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	31.2A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPB65R110CFDAATMA1 is a-type of low-voltage N-channel MOSFET which is developed by Infineon Technologies. This type of MOSFETs has three pins- drain, source and gate, which are connected with the electrical circuit. It is mainly used in the low voltage and low power applications, such as small lamps, relays, and other light-load applications. This article would analyze the applications and working principle of IPB65R110CFDAATMA1. The typical applications of IPB65R110CFDAATMA1 MOSFET include: switching, logic level and ground reference applications. In terms of the switching application, this type of MOSFET is mainly used to convert the low input voltage to the low output voltage. The MOSFET is connected with the other components, such as power supply, relay, lamps and other circuits, to control the flow of the current through the circuit. Furthermore, the IPB65R110CFDAATMA1 can be used in logic level applications where the switching is required with a low logic level. The low threshold voltage of this MOSFETs reduces the potential of circuit damage by the overvoltage. Further, the gate voltage of this MOSFETs is efficiently connected with the ground via a low resistance path, which increases the efficiency and speed of the circuit. The working principle of IPB65R110CFDAATMA1 can be understood from its structure and its operating mode. The MOSFET is composed of three terminals- drain, source and gate, as well as a channel which is formed between the source and drain ends. When a small voltage is applied to the gate, an electric field is formed which attracts the electrons present in the channel and the gate region. This reduces the channel resistance and increases the channel current, thereby increasing the drain current or gate current. The gate current then results in the change of the drain-source voltage, which can effectively control the amount of current to various components connected with the circuit.The basic operation of the IPB65R110CFDAATMA1 MOSFET requires an ideal power supply, which provides a stable voltage. This allows the electrons to move freely through the gate region and helps to control the drain current. Moreover, the working of MOSFET is also influenced by the temperature and the doping concentration of each layer of the multi-layer structure. The body doping strongly influences the threshold voltage level, while the gate doping influences the capacitance and transconductance of the MOSFETs. In summary, the IPB65R110CFDAATMA1 MOSFET is mainly used in low voltage and low power applications. It has three main parts- drain, source and gate, and a channel between them. The basic operation of the MOSFET is influenced by the input voltage applied to the gate and the parameters like body doping and gate doping. IPB65R110CFDAATMA1 can be used in various applications, such as switching, logic level, and ground reference applications. The advantages of this type of MOSFETs include high efficiency, low power consumption, and low threshold voltage.

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