| Allicdata Part #: | BFP640H6433-ND |
| Manufacturer Part#: |
BFP 640 H6433 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | TRANS RF NPN 4V 50MA SOT343 |
| More Detail: | RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mo... |
| DataSheet: |  BFP 640 H6433 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 4.5V |
| Frequency - Transition: | 40GHz |
| Noise Figure (dB Typ @ f): | 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz |
| Gain: | 24dB |
| Power - Max: | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 110 @ 30mA, 3V |
| Current - Collector (Ic) (Max): | 50mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-82A, SOT-343 |
| Supplier Device Package: | PG-SOT343-4 |
| Base Part Number: | BFP640 |
Description
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BFP 640 H6433 application field and working principle
The BFP 640 H6433 is a bipolar junction transistor (BJT) commonly used in radiofrequency (RF) applications, such as amplifying signals requiring low noise and high-frequency compatibility. It is capable of working at frequencies up to 1MHz, making it ideal for a variety of RF-related applications.This BJT is a NPN type common-emitter transistor, meaning it can be used to create a voltage gain or to amplify a weaker signal while maintaining a low output impedance. To achieve this, a BJT relies on the interactions between its emitter, base, and collector. The emitter is at a relatively low potential and serves as the input point for the transistor. Current applied to the base will then connect the emitter to the collector, increasing the current flowing through the transistor. The collector then is at a higher voltage than the emitter, making it the output point of the transistor.The BFP 640 H6433 offers excellent gain performance and a low noise level, facilitating the implementation of a variety of circuit designs. Its wide range of applications includes switching, amplification, and oscillator circuits. Additionally, it can also be used in wireless gadgets such as cellphones and Wi-Fi routers.The device is constructed from a dielectric layer sitting on an n-type substrate. On top of this is the emitter, base, and collector. The emitter is a heavily doped section of the n-type material, allowing it to inject holes into the base layer. The base is formed using a thin layer of p-type material to create a lightly doped region. The collector defines the other side of the transistor, providing a low impedence path for the current applied to the base.Designers must account for two key parameters when designing a circuit for a BJT. The first is the bias voltage, also called the base-emitter voltage, which determines how much current will flow through the device. Generally, the higher the base-emitter voltage, the more current that will flow through the transistor. The second parameter is the bias current, which determines the electrical power applied to the device. A higher bias current will cause the transistor to generate more heat.Because of the BFP 640 H6433’s low current and low power consumption, it can easily meet the power requirements of many applications. Electrically, this device can support up to 1MHz frequency with good coupling and low noise output. This makes it a highly reliable transistor for RF applications.Overall, the BFP 640 H6433 is a high-performance BJT designed for RF applications. It is characterized by superb gain performance, a low noise level, and a wide frequency range, which make it suitable for a variety of circuit design needs. Additionally, its easy integration of the dielectric layer and highly doped regions allows for high gains, making it suitable for high-frequency applications such as cell phones and Wi-Fi routers.The specific data is subject to PDF, and the above content is for reference
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