AUIRF2804L

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AUIRF2804L is a logic level Field Effect Transistor (FET) specifically designed to minimize on-state resistance while providing superior switching performance in the majority of applications. It is capable of changing between a low impedance gate (ON) and a high impedance gate (OFF) by means of voltage application. The AUIRF2804L has the distinction of being a Logic Level FET, meaning that it has a schottky diode between its gate and source terminals. This diode allows the AUIRF2804L to be fully turned on with a lower gate-to-source voltage than is required by standard FETs for full conduction.

The AUIRF2804L is made of silicon (Si) and features two very important parameters when it comes to the field effect transistor’s performance-the maximum drain-source voltage and current ratings and the gate-source voltage. The maximum drain-source voltage for this device is VDSS = 20V, which determines the absolute maximum voltage allowed to be applied to the drain and source terminals. The maximum drain current that the device can handle is ID = 8A, which is the current drawn through the drain terminal when the transistor is fully turned on. The gate-source voltage VGSS is the voltage level used to turn the transistor on and off. For the AUIRF2804L it is 8 to 16V. In order to turn the transistor on, the gate-source voltage must be at least 8V. For applications that require a faster switching service speed, the AUIRF2804L can handle up to 16V.

The AUIRF2804L consists of three pins (source, drain, and gate) and has an internal structure that enables the device to function as a complement of a high side switch and a low side switch. The source terminal is the negative terminal in a low side switch and the positive terminal in a high side switch. The drain terminal is the positive terminal in a low side switch and the negative terminal in a high side switch. The source-to-drain voltage determines which side the device is being used as. When the source-to-drain voltage is positive, the device is functioning as a low side switch, and when the source-to-drain voltage is negative, the device is functioning as a high side switch.

In addition, the AUIRF2804L features very low RDS(on) levels from 0.0063 to 0.021 ohms, providing a very efficient power transfer and a low overall heat dissipation. This is particularly useful for applications that require solid-state switching and high power performance in a limited space. This makes it ideal for power management in automotive, industrial, and consumer applications. It is also designed for logic level applications and can be used to control loads such as motors, lamps, and speakers.

Overall, the AUIRF2804L is a highly efficient, low on resistance, and robust power MOSFET which offers superior switching performance and maximum drain-source voltage and current ratings. Its ability to switch between logic level high side and low side switches makes it extremely versatile and enables it to be used in a wide variety of applications. With its low RDS(on) levels, it is able to provide high power performance in a small space with minimal heat dissipation as well.

The specific data is subject to PDF, and the above content is for reference