IPB020N10N5LFATMA1

Vgs(th) (Max) @ Id:	4.1V @ 270µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	313W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	840pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	195nC @ 10V
Series:	OptiMOS™-5
Rds On (Max) @ Id, Vgs:	2 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPB020N10N5LFATMA1 is a N-channel PowerTrench® MOSFET manufactured by Infineon Technologies and is part of their OptiMOS™ power MOSFET product family. This device contains an advanced low-voltage process with high-speed switching performance, improved thermal resistance, and robust design capability. The main application fields of IPB020N10N5LFATMA1 are in high efficiency power conversion systems such as DC/DC converters, motor controls, switched-mode power supplies, and Hard-Switching applications. It can also be used in applications where a high power density switching solution is required such as LED lighting and Class-D audio amplifiers. The working principle of IPB020N10N5LFATMA1 is based on the basic MOSFET operation. It consists of a gate, a source, and a drain, which allow for current to be switched on/off depending on the voltage applied to the gate. When sufficient voltage is applied to the gate, the resultant electric field causes an inversion layer to form in the region between the source and drain. This inversion layer allows the MOSFET to become conductive and subsequently leads to the current flow from the source to the drain. The IPB020N10N5LFATMA1 features an N-channel MOSFET with an integrated anti-parallel diode, making it suitable for applications that require reverse-recovery protection. This device also supports a maximum current level of 20A while providing a low typical on-state resistance of 10.6mΩ. It also features a low threshold voltage of 1.2V and is rated for operation in a wide temperature range of -55 to +175 °C. One of the most important features of the IPB020N10N5LFATMA1 is its high speed switching capability. This device features an Ultra-low charging current of only 50 mA, allowing it to achieve switching frequencies of up to 10 MHz. This makes it ideal for applications that require high-speed switching and fast response times. In summary, IPB020N10N5LFATMA1 is a high speed N-channel PowerTrench® MOSFET manufactured by Infineon Technologies and is suitable for use in applications that require a high power density and fast switching speeds. This device is integrated with an anti-parallel diode to provide reverse-recovery protection and is rated to support a maximum current level of up to 20A. It is also well suited for applications such as DC/DC converters, motor controls, switched-mode power supplies, LED lighting, class-d audio amplifiers, and Hard-Switching applications.

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