IRF6218STRLPBF Allicdata Electronics
Allicdata Part #:

IRF6218STRLPBFTR-ND

Manufacturer Part#:

IRF6218STRLPBF

Price: $ 1.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 150V 27A D2PAK
More Detail: P-Channel 150V 27A (Tc) 250W (Tc) Surface Mount D2...
DataSheet: IRF6218STRLPBF datasheetIRF6218STRLPBF Datasheet/PDF
Quantity: 7200
1 +: $ 1.09000
10 +: $ 1.05730
100 +: $ 1.03550
1000 +: $ 1.01370
10000 +: $ 0.98100
Stock 7200Can Ship Immediately
$ 1.09
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 150 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF6218STRLPBF is a single n-channel MOSFET, which belongs to the family of transistors, FETs and MOSFETs. The chip has a drain-source breakdown voltage (BVds) of 33V and a maximum drain current of 18A. It also offers low dynamic output capacitance, which makes it suitable for applications where switching speed and low power loss are crucial.

One of the main applications of the IRF6218STRLPBF is in the field of power management. For example, it can be used to provide power supplies with efficient, low-cost solutions for a variety of applications. It can be used as an efficient power switch for DC-DC converters, AC-DC power supplies, as well as in switching regulators for secondary protection circuits and for load switching.

Another main application of the IRF6218STRLPBF is in the field of motor control. This type of transistor can be used in motor control applications, such as brushless DC motor control and can offer improved efficiency, precision and stability compared to conventional motor control solutions. It can also be used in digital signal processing, providing improved resolution and efficiency compared to other types of transistors and FETs.

The operation of the IRF6218STRLPBF is based on a phenomena known as the “junction-effect”. This effect occurs when supply voltage is applied to the drain and gate electrodes of the transistor. This creates an electric field between the two electrodes, which opens a conducting channel and allows current to flow between the electrodes. The flow of current between the electrodes is known as the “channel current” and is proportional to the strength of the electric field.

The type of MOSFET used can be critical in determining the characteristics of the channel current. The IRF6218STRLPBF uses the advanced SOI technology to improve the performance of the channel current. This technology increases the breakdown voltage of the transistor and reduces the transistor’s output capacitance. These features make the IRF6218STRLPBF an ideal solution for applications requiring high switching speed and low power loss.

In summary, the IRF6218STRLPBF is a single n-channel MOSFET that provides an efficient, low-cost solution for power management, motor control, and digital signal processing applications. It offers an improved breakdown voltage and low output capacitance, making it suitable for applications requiring high switching speed and low power loss. The operation of the IRF6218STRLPBF is based on the junction-effect and its performance is further improved by the use of advanced SOI technology.

The specific data is subject to PDF, and the above content is for reference

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