IPP80R900P7XKSA1

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The IPP80R900P7XKSA1 is a depletion type, vertical double diffused MOSFET, ideal for applications such as power battery management, and SMPS. These transistors consist of a vertical insulated gate field-effect transistor with insulated source-drain region, which offers superior electrical characteristics. The IPP80R900P7XKSA1 is optimized to provide a very high maximum junction temperature of 150°C and is also capable of withstanding a wide range of temperatures, making it suitable for applications in temperatures ranging from -55°C to 150°C.

The IPP80R900P7XKSA1 is a highly reliable MOSFET, which features low on-resistance, low temperature rise, low noise, and low dynamic resistance. This device is also highly efficient, with a maximum drain current of over 7A and a drain-source breakdown voltage of up to 900V. This makes the IPP80R900P7XKSA1 ideally suited for power battery management applications, especially those in which high current and/or voltage is required.

The working principle of a MOSFET is quite simple. It consists of an insulated gate field-effect transistor with an insulated source-drain region. This insulated region is controlled by an electric field applied between the gate and the source-drain region. This electric field controls the current flow between the source and the drain. When the gate voltage is low, the current flow is blocked; when the gate voltage is high, the current flow is enabled.

The IPP80R900P7XKSA1 is also suitable for applications such as SMPS, DC-DC converters, high current applications in automotive, industrial and consumer electronics, lighting power applications, and power management applications. This device offers long-term stability and excellent thermal performance, making it a reliable and efficient choice for a wide range of applications.

In conclusion, the IPP80R900P7XKSA1 is a depletion type, vertical double diffused MOSFET, optimized for applications such as power battery management and SMPS. This device features low on-resistance, low temperature rise, low noise, and low dynamic resistance. It is also highly efficient and offers maximum drain current of over 7A and a drain-source breakdown voltage of up to 900V. The working principle of this device is simple—it consists of an insulated gate field-effect transistor with an insulated source-drain region, which is controlled by an electric field applied between the gate and the source-drain region. This device is highly reliable and efficient and is suitable for a wide range of applications in temperatures ranging from -55°C to 150°C.

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