IRF7317TRPBF Allicdata Electronics
Allicdata Part #:

IRF7317PBFTR-ND

Manufacturer Part#:

IRF7317TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N/P-CH 20V 8-SOIC
More Detail: Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Sur...
DataSheet: IRF7317TRPBF datasheetIRF7317TRPBF Datasheet/PDF
Quantity: 4000
Stock 4000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 700mV @ 250µA
Base Part Number: IRF7317PBF
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF7317TRPBF Application Field and Working Principle

IRF7317TRPBF is a type of Field Effect Transistor (FET) Array which contains multiple FETs in a single package. It is designed to provide improved switching and noise performance in high-frequency power control circuits such as Class D amplifiers, motor control, and lighting ballasts. It can be used in applications where the input stage or power supply requires high impedance due to its high input resistance.

Application Field: The FET Array can be used in a wide range of applications including motor control, tracking systems, HVAC and lighting control, power supplies, switching power amplifiers, and even remote controls. Additionally, it can be used in automotive applications and in telecommunications systems, such as those used in cell phones and other wireless communication systems. They can also be used in linear applications such as amplifiers, and their high frequency switching capabilities makes them ideal for switching power supplies and other high-end electronics.

Working Principle: The IRF7317TRPBF works by turning on and off according to the input signal applied to the gate. When no signal is applied, the FET is off. Conversely, when a signal is applied, the FET is turned on and conducts current in the specified direction from the drain to the source. As the driving signal changes, the FET\'s output can be modified accordingly. Its high switching speeds allow for higher performance compared to a BJT, and it can be used for high-power applications due to its low on-resistance and low power losses.

The IRF7317TRPBF is built from insulated-gate bipolar transistors (IGBT) and two FETs. It has an exceptionally high switching performance compared to a standard IGBT, making it highly suitable for high frequency applications. In a power switching application, the IGBT is used to control the amount of current that is flowing through the circuits, while the two FETs act as a current reversal switch to allow the current to flow in the opposite direction. This way, the voltage and current outputs are precisely controlled.

The IRF7317TRPBF is also designed to provide a variety of control options. It has built-in sync-lock protection, and can be configured to provide total protection against under/over voltage and over current as well as over temperature protection. The FET Array is also designed to reduce noise and spurious signals, making it highly suitable for high-end electronics.

The IRF7317TRPBF is a powerful FET Array that can be used for a variety of applications demanding high-speed switching and precise control. Its ability to precisely control the current and voltage outputs, provide over/under voltage and over-temperature protection, and reduce noise and spurrious signals makes it highly suitable for high-end electronics such as motor control, tracking systems, HVAC and lighting control, power supplies, switching power amplifiers, and more.

The specific data is subject to PDF, and the above content is for reference

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