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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
ICE3BR1065JFXKS A2-ND	ICE3BR1065JFXKS A2	Infineon Technologies	View more Series: CoolMOS, CoolSETF3R Packaging: Tube Part Status: Obsolete Output Isolation: Isolated Internal Switch(s): Yes Voltage - Breakdown: 650V Topology: Flyback Voltage - Start Up: 18V Voltage - Supply (Vcc/Vdd): 10.5 V ~ 25 V Duty Cycle: 75% Frequency - Switching: 67kHz Power (Watts): 178W Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Operating Temperature: -25C ~ 130C (TJ) Package / Case: TO-220-6 Full Pack, Formed Leads Supplier Device Package: PG-TO220-6-247 Mounting Type: Through Hole Base Part Number: ICE3BR1065	1000 Order	1+: $0
PVT412LS-TPBF-N D	PVT412LS-TPBF	Infineon Technologies	View more Series: PVT, HEXFET Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.2VDC Voltage - Load: 0V ~ 400V Load Current: 120mA On-State Resistance (Max): 35 Ohms Termination Style: Gull Wing Package / Case: 6-SMD (0.300", 7.62mm) Supplier Device Package: 6-SMT	1000 Order	--
PVY116-TPBF-ND	PVY116-TPBF	Infineon Technologies	View more Series: PVY, HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.2VDC Voltage - Load: 0V ~ 40V Load Current: 250mA On-State Resistance (Max): 4.4 Ohms Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP	1000 Order	1+: $0
TLE49462KHTSA1T R-ND	TLE49462KHTSA1	Infineon Technologies	View more Series: TLE Packaging: Tape & Reel (TR) Part Status: Active Function: Latch Technology: Hall Effect Polarization: South Pole Sensing Range: 3.5mT Trip, -3.5mT Release Test Condition: 25C Voltage - Supply: 2.7 V ~ 18 V Current - Supply (Max): 6mA Current - Output (Max): 20mA Output Type: Open Collector Features: Temperature Compensated Operating Temperature: -40C ~ 150C (TJ) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	20000 Order	--
BGT70E6327XTSA1 -ND	BGT70E6327XTSA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	1000+: $37.9663
BGT60EESKITTOBO 1-ND	BGT60EESKITTOBO 1	Infineon Technologies	View more Part Status: Active Type: Transceiver For Use With/Related Products: BGT60 Supplied Contents: Board(s)	1000 Order	1+: $1.26
BGA735N16E6327X TSA1TR-ND	BGA735N16E6327X TSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz P1dB: -6dBm Gain: 16dB Noise Figure: 1.1dB RF Type: UMTS Voltage - Supply: 3.6V Current - Supply: 10mA Package / Case: 16-XFQFN Exposed Pad Supplier Device Package: TSNP-16-1	1000 Order	7500+: $0.483
PTMA180152MV1-N D	PTMA180152M V1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Frequency: 1.8GHz~2GHz Gain: 30dB RF Type: GSM, EDGE Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Supplier Device Package: PG-DSO-20-63	1000 Order	1+: $0
IGA30N60H3XKSA1 -ND	IGA30N60H3XKSA1	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Part Status: Obsolete IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 18A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Power - Max: 43W Switching Energy: 1.17mJ Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25C: 18ns/207ns Test Condition: 400V, 30A, 10.5 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: PG-TO220-3-31 Full Pack	1000 Order	1+: $0
BF998E6327HTSA1 TR-ND	BF998E6327HTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Transistor Type: N-Channel Frequency: 45MHz Gain: 28dB Voltage - Test: 8V Current Rating: 30mA Noise Figure: 2.8dB Current - Test: 10mA Voltage - Rated: 12V Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4 Base Part Number: BF998	12000 Order	3000+: $0.0801 6000+: $0.0753 15000+: $0.0704 30000+: $0.0646 75000+: $0.0622
FS50R12KT3BOSA1 -ND	FS50R12KT3BOSA1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Power - Max: 280W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 3.5nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $49.1375
IRGP4790PBF-ND	IRGP4790PBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: 455W Switching Energy: 2.5mJ (on), 2.2mJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25C: 50ns/200ns Test Condition: 400V, 75A, 10 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	1+: $0
FF300R12KT3EHOS A1-ND	FF300R12KT3EHOS A1	Infineon Technologies	View more Part Status: Active Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 480A Power - Max: 1450W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 21nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $81.4485
IRF7103PBFTR-ND	IRF7103TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: IRF7103PBF	1000 Order	--
FS225R17OE4BOSA 1-ND	FS225R17OE4BOSA 1	Infineon Technologies	View more Series: EconoPACK+ Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 350A Power - Max: 1450W Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 600pF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	4+: $267.406
FS900R08A2P2B31 BOSA1-ND	FS900R08A2P2B31 BOSA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	3+: $511.211
2PS13512E43W396 89NOSA1-ND	2PS13512E43W396 89NOSA1	Infineon Technologies	View more Part Status: Not For New Designs IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Input: Standard NTC Thermistor: Yes Operating Temperature: -25C ~ 55C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $3.15
IRF9328TRPBFTR- ND	IRF9328TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.4V @ 25A Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	16000 Order	--
IPG20N04S408AAT MA1TR-ND	IPG20N04S408AAT MA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 20A Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 30A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Power - Max: 65W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	5000 Order	5000+: $0.5076
IRF6614TRPBFTR- ND	IRF6614TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 12.7A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V Vgs(th) (Max) @ Id: 2.25V @ 250A Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 20V Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET ST Package / Case: DirectFET Isometric ST	4200 Order	--
BSS806NEH6327XT SA1TR-ND	BSS806NEH6327XT SA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V Vgs(th) (Max) @ Id: 0.75V @ 11A Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	3000+: $0.0619
PTFA181001HLV1R 250-ND	PTFA181001HL V1 R250	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: LDMOS Frequency: 1.88GHz Gain: 16.5dB Voltage - Test: 28V Current Rating: 1A Current - Test: 750mA Power - Output: 100W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: PG-64248-2 Base Part Number: PTFA181001	1000 Order	1+: $0
PTFA210601FV4R2 50-ND	PTFA210601F V4 R250	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: LDMOS Frequency: 2.14GHz Gain: 16dB Voltage - Test: 28V Current Rating: 10A Current - Test: 550mA Power - Output: 12W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37265-2 Base Part Number: PTFA210601	1000 Order	1+: $0
IPD80R1K4CEATMA 1TR-ND	IPD80R1K4CEATMA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.3A, 10V Vgs(th) (Max) @ Id: 3.9V @ 240A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V Power Dissipation (Max): 63W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	5000 Order	2500+: $0.3622
BCR185SH6327XTS A1TR-ND	BCR185SH6327XTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	9000 Order	3000+: $0.0447 6000+: $0.0389
BC847PNH6433XTM A1TR-ND	BC847PNH6433XTM A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BC847PN	1000 Order	10000+: $0.0295
BCR114L3E6327-N D	BCR 114L3 E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 160MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4	1000 Order	1+: $0
BCR162FE6327-ND	BCR 162F E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3 Base Part Number: BCR162	1000 Order	1+: $0
BCR179L3E6327-N D	BCR 179L3 E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4	1000 Order	1+: $0
IRFI4212H-117P- ND	IRFI4212H-117P	Infineon Technologies	View more Packaging: Tube Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 11A Rds On (Max) @ Id, Vgs: 72.5 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V Power - Max: 18W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack Supplier Device Package: TO-220-5 Full-Pak	998 Order	--
IGCM04G60GAXKMA 1-ND	IGCM04G60GAXKMA 1	Infineon Technologies	View more Series: CIPOS Part Status: Active Type: IGBT Configuration: 3 Phase Current: 4A Voltage: 600V Voltage - Isolation: 2000Vrms Package / Case: 24-PowerDIP Module (1.028", 26.10mm)	1000 Order	280+: $4.1941
IRAM136-1061A2- ND	IRAM136-1061A2	Infineon Technologies	View more Series: iMOTION Part Status: Obsolete Type: IGBT Configuration: 3 Phase Current: 12A Voltage: 600V Voltage - Isolation: 2000Vrms Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads	1000 Order	--
IRF8313PBF-ND	IRF8313PBF	Infineon Technologies	View more Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9.7A Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Power - Max: 2W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: IRF8313PBF	1000 Order	--
IPSA70R950CEAKM A1-ND	IPSA70R950CEAKM A1	Infineon Technologies	View more Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 150A Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V Power Dissipation (Max): 94W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	1500 Order	1+: $0.567 10+: $0.4958 100+: $0.3826 500+: $0.2834 1000+: $0.2267
MMBTA56LT1HTSA1 TR-ND	MMBTA56LT1HTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: MMBTA	1000 Order	36000+: $0.0179
IRF8113PBFTR-ND	IRF8113TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 17.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 17.2A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
BSZ0904NSIATMA1 TR-ND	BSZ0904NSIATMA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 18A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1463pF @ 15V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.1W (Ta), 37W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.2323
IRFH5301TRPBFTR -ND	IRFH5301TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 35A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.85 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100A Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5114pF @ 15V Power Dissipation (Max): 3.6W (Ta), 110W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	1000 Order	--
IRFS3607TRLPBFT R-ND	IRFS3607TRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V Vgs(th) (Max) @ Id: 4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	10000 Order	--
IRF7780MTRPBFTR -ND	IRF7780MTRPBF	Infineon Technologies	View more Series: StrongIRFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 3.7V @ 150A Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6504pF @ 25V Power Dissipation (Max): 96W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DirectFET Isometric ME Package / Case: DirectFET Isometric ME	1000 Order	--

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