IPD80R1K4CEATMA1

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The IPD80R1K4CEATMA1 is a vertical power MOSFET specifically designed for low-frequency switching in a variety of applications. This part offers a maximum drain current of 5A, a maximum drain source voltage of 30V, and a maximum gate source voltage of ±20V. It is capable of dissipating up to 20W of power and offers a high on-state resistance. The device is packaged in a 3-pin TO-220FH and is suited for use in capacitive load applications.

Application Field of IPD80R1K4CEATMA1

The IPD80R1K4CEATMA1 is most notably utilized in the industrial market segment because of its excellent performance at lower frequency switching. It is commonly used in power supplies, motor controllers, medical applications, motor drives, HVAC controls, automation, and control applications. This device is highly suited for power-switching applications that require high-efficiency operation, such as electric motor drives and solar charging.

Further, IPD80R1K4CEATMA1 is ideal for use in parts of electric vehicles, including drives, inverters, inverter manage module, and traction battery region. Additionally, it provides better thermal performance to enable higher current drive capacity.

Working Principle

The IPD80R1K4CEATMA1 adopts a vertical channel structure, which enables it to be used for low-frequency switching. Since this part utilizes a vertical channel structure for its transistors, it is able to operate more efficiently at lower frequencies compared to other power MOSFETs that use a horizontal channel structure. This makes the IPD80R1K4CEATMA1 perfect for power supply and motor control applications, as they are usually operated at lower frequencies.

The IPD80R1K4CEATMA1 is also capable of dissipating up to 20W of power and has a high on-state resistance. This makes it suitable for applications that require a high power handling capacity. Additionally, this device has a maximum gate source voltage of ±20V, meaning it can handle a wide range of gate-source voltages.

All of these features make the IPD80R1K4CEATMA1 a great choice for a variety of applications. Its excellent performance at lower frequency switching, high power handling capacity, and wide gate-source voltage range make it capable of serving a wide range of low-frequency switching applications.

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