
Allicdata Part #: | IRFS3607TRLPBFTR-ND |
Manufacturer Part#: |
IRFS3607TRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 80A D2PAK |
More Detail: | N-Channel 75V 80A (Tc) 140W (Tc) Surface Mount D2P... |
DataSheet: | ![]() |
Quantity: | 10000 |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3070pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 46A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRFS3607TRLPBF is a field effect transistor (FET) which is widely used in a variety of applications. The IRFS3607TRLPBF is a powerful, low-cost solution for a variety of power-related tasks, including high voltage switching, low noise amplifier design, range extension and filter applications.
The IRFS3607TRLPBF is a P-channel metal-oxide semiconductor (MOS) field effect transistor (FET) based on the fully depleted SOI (silicon on insulator) process. The FET has low ON-resistance (R ON ) of 4.5 milliohm and high power rating, making it an ideal choice for a variety of power-related tasks. It also has a low input capacitance of 0.4 pF, which makes it suitable for combining with an active load for high-speed switching.
The IRFS3607TRLPBF is a single FET with a low R DS(ON) , allowing it to be operated at low gate voltages. This device also has a low input capacitance, improving its performance in high-frequency switching applications.
The IRFS3607TRLPBF offers excellent thermal characteristics, making it well suited for applications with high power requirements. The device has an ESD ratings of up to 8 kV (HBM), allowing it to be used in environments where electrical charge is present. The device also has an Avalanche Immunity rating of up to 200V, making it resistant to electrical over-stress.
The IRFS3607TRLPBF can be used in high voltage switching, low noise amplifier design, range extension and filter applications. The device is available in a variety of packages, including DPAK, D2PAK and TO-220. It is also suitable for operation over a wide range of temperatures and gains wide acceptance in automotive applications.
The working principle of the IRFS3607TRLPBF is quite simple. When a voltage is applied to the gate electrode, it induces an electric field which attracts majority carriers (electrons) to the device, thereby reducing the source-drain resistance. This reduces the amount of current flowing through the circuit, allowing for efficient power management and low power consumption.
The IRFS3607TRLPBF is a versatile and powerful device which offers many advantages for a variety of applications. It has a low R DS(ON) that enables it to be operated at low gate voltages. Its high power rating and excellent thermal characteristics make it ideal for applications with high power requirements. It also has a low input capacitance and Avalanche immunity, making it suitable for a variety of conditions and applications.
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