Allicdata Part #: | IRFH5301TRPBFTR-ND |
Manufacturer Part#: |
IRFH5301TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 35A 5X6 PQFN |
More Detail: | N-Channel 30V 35A (Ta), 100A (Tc) 3.6W (Ta), 110W ... |
DataSheet: | IRFH5301TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.35V @ 100µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PQFN (5x6) Single Die |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5114pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 77nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.85 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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:IRFH5301TRPBF is a single field effect transistor (FET) that is based on a planar technology. This type of transistor is used for switching and amplification of signals that have either low or high frequency. It has a structure that allows the power to be transferred from the drain to the source without requiring a gate voltage. The IRFH5301TRPBF is commonly used in applications such as radios, television receivers, amplifiers and other electronic equipment that require a single FET. It is also used in automotive applications such as engine control and fuel delivery systems.
The working principle of the IRFH5301TRPBF is a process called hot electron injection. This process is used to control the current flow in the transistor by manipulating the electrons in the substrate. Electrons are injected in the substrate and their movement is then regulated through the use of metallic gates. As the electrons increase in the substrate, the current flow increases as well. The exact opposite occurs when the electrons decrease, decreasing the current flow in the transistor.
The IRFH5301TRPBF has several application fields, including power management, circuit protection, and load switching. In power management circuits, the device is often used to regulate voltage and current. It is also used in load switching applications to switch between different power sources. Circuit protection can be achieved by using the current limiting capabilities of the transistor. This device is also commonly used in the design of high frequency switch-mode power supplies.
The IRFH5301TRPBF is a popular choice when it comes to transistor applications due to its high power efficiency and good thermal properties. It has a low on-state resistance and a high breakdown voltage, allowing it to meet the requirements of many different applications. It is also a reliable opto-isolator, providing protection to sensitive electronic components from external shock and vibration.
The IRFH5301TRPBF is an excellent choice for those looking for a reliable and efficient single FET. Its working principle of hot electron injection allows for precise current control, and its wide range of applications makes it a versatile device. Its low on-state resistance and high breakdown voltage make it suitable for a variety of electronic devices. For these reasons, the IRFH5301TRPBF is an excellent choice for use in various applications.
The specific data is subject to PDF, and the above content is for reference
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