IRF7780MTRPBF Discrete Semiconductor Products |
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| Allicdata Part #: | IRF7780MTRPBFTR-ND |
| Manufacturer Part#: |
IRF7780MTRPBF |
| Price: | $ 0.85 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 75V 89A |
| More Detail: | N-Channel 75V 89A (Tc) 96W (Tc) Surface Mount Dire... |
| DataSheet: | IRF7780MTRPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.85000 |
| 10 +: | $ 0.82450 |
| 100 +: | $ 0.80750 |
| 1000 +: | $ 0.79050 |
| 10000 +: | $ 0.76500 |
| Vgs(th) (Max) @ Id: | 3.7V @ 150µA |
| Package / Case: | DirectFET™ Isometric ME |
| Supplier Device Package: | DirectFET™ Isometric ME |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 96W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6504pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 186nC @ 10V |
| Series: | StrongIRFET™ |
| Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 53A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 89A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IRF7780MTRPBF is a N Channel Power MOSFET transistor from International Rectifier that offers a wide variety of operational and performance benefits for the electrical and electronic design industry. This article will discuss the application field and working principle of the IRF7780MTRPBF.
In terms of its application field, this transistor is suitable for use in high-current switching applications, such as motor control, power supplies, and power conversion. Additionally, its design features make it ideal for a wide range of applications within the automotive, industrial, medical, and communications industries. As such, this transistor is suitable for a wide variety of different applications across a variety of markets.
In terms of its working principle, the IRF7780MTRPBF is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). As a result, it is constructed of an insulated-gate field-effect transistor (IGFET) that uses electric signals to control the flow of electrical current through the body region of the transistor. This transistor works by using electric charges stored on a metal oxide gate dielectric in order to control the transistor\'s operation and the conditions for conducting current through it. By using electric charges to control the operation of the transistor, the design of the IRF7780MTRPBF makes it highly efficient, reliable, and cost effective compared to other equivalent transistors.
In terms of its properties, this transistor offers several benefits and features. Most notably, it features a low RDS(on), and a high power dissipation capability, with a maximum drain current of up to 85A and a maximum drain-source voltage of up to 85V. Moreover, it offers a fast switching time due to its low capacitance and minimal transition time, making it ideal for use in high speed systems. In addition, it also has an excellent temperature tolerance, offering an extended operating temperature range of -55°C to +175°C. This makes the transistor suitable for use in extremely harsh conditions, and ensures it can efficiently function in a wide range of different environments and conditions.
Due to its combination of excellent performance, efficient operation, and robust design, the IRF7780MTRPBF is ideal for use in applications such as motor control, power supplies, power conversion, and automation. Furthermore, its combination of low power consumption, heat tolerance, and fast switching time make it suitable for use in a variety of different applications, especially those that require frequent changes in current or voltage. As such, this transistor is becoming increasingly popular for those seeking to expand their product’s capabilities across different fields and industries.
In conclusion, the IRF7780MTRPBF is a highly efficient N-channel MOSFET transistor. It features an excellent combination of electrical and performance features, such as low RDS(on), fast switching, and robust design. It is suitable for use in a wide range of applications, including motor control, power supplies, power conversion, and automation. Additionally, its combination of low power consumption, heat tolerance, and fast switching time make it ideal for use in a variety of different applications. As such, it is becoming increasingly popular for those seeking to expand their product’s capabilities across different fields and industries.
The specific data is subject to PDF, and the above content is for reference
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IRF7780MTRPBF Datasheet/PDF