IPG20N04S408AATMA1 Discrete Semiconductor Products

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The IPG20N04S408AATMA1 is categorized under transistors - field effect transistors (FETs), and metal oxide semiconductor field effect transistors (MOSFETs) - arrays. It is a logic-level gate FET array, composed of four independent N-channel enhancement mode MOSFETs and has a maximum drain current of 20 amps.

The main characteristic of the IPG20N04S408AATMA1 is its low on-resistance (5 Ohms), which makes it ideal for a wide range of applications, particularly those where power efficiency is a priority. Some of these include solar power applications, motor control, and power management applications.

The IPG20N04S408AATMA1 operates at a maximum drain-source breakdown voltage of 30V and the maximum drain source voltage is 800V. It has a maximum transconductance of 14.8 mS and a maximum thermal resistance of 3°C/W making it suitable for high power applications.

The device also has an excellent SOA (safe operating area) performance, with a RDS(on) at 25 ºC of 0.9 Ohms, and a low gate charge of 5 nC. This gives it superior performance in high-frequency switching applications.

In terms of operation, the device operates by controlling the current flow through a channel between the source and drain regions. It does this in response to an applied voltage between the gate and the source regions, in a phenomenon known as gate-controlled current flow. The operation is voltage-controlled as well, since the higher the voltage, the greater the current flow.

The IPG20N04S408AATMA1 is also suitable for use in power driven circuits, such as push-pull amplifiers, power switching circuits, and motor control circuits. Its high speed switching capability makes it especially useful for motor control applications, where it can handle loads up to 20 amps and supply voltages up to 800V. Its low on-resistance also ensures high power efficiency.

In a nutshell, the IPG20N04S408AATMA1 is an ideal choice for a wide range of motor control applications where power efficiency is a priority. Its low on-resistance and high speed switching capability make it suitable for high power applications, and its high SOA performance makes it suitable for use in high-frequency switching applications.

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