IRFI4212H-117P

Series:	--
Packaging:	Tube
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	11A
Rds On (Max) @ Id, Vgs:	72.5 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	490pF @ 50V
Power - Max:	18W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-5 Full Pack
Supplier Device Package:	TO-220-5 Full-Pak

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Introduction:
The IRFI4212H-117P is an array of N-channel Power MOSFETs. It is designed to provide optimized performance in a wide range of applications. It features low on resistance and can be used to switch low voltage and high current signals in a variety of automotive, industrial, and consumer applications. The IRFI4212H-117P is a robust device, which provides superior switching performance over other MOSFETs.
Application Field:
The IRFI4212H-117P is ideal for use in a variety of automotive, industrial, and consumer applications. This includes applications in motor control, power supplies, power converters, power converters and audio amplifiers. The device is also suitable for use in communication systems, home appliances, and robotics. Additionally, the IRFI4212H-117P is designed to withstand high voltage and high current spikes and can be used in applications switching high power. This makes it an ideal device for use in high-power circuits.
Working Principle:
The IRFI4212H-117P utilizes N-channel MOSFETs as its primary components. A MOSFET is a type of transistor that provides high-speed switching and can withstand high voltages and currents. Its main function is to switch current in a circuit and can be used to amplify a signal or provide power control.
In a typical MOSFET, a channel is formed between the source and the drain. This is accomplished by the application of a gate voltage to the gate terminal. When a voltage is applied to the gate, it creates an electric field that attracts electrons, allowing current to flow through the channel. This current flow is what provides the switching effect and is also what allows the device to amplify a signal.
The IRFI4212H-117P uses an array of N-channel MOSFETs to provide an optimized performance. Each MOSFET in the array has an individual gate voltage that is responsible for the switching action, allowing the device to provide superior performance over other N-channel MOSFETs. Additionally, the device is designed to be robust and withstand high voltage and high current spikes.
Conclusion:
The IRFI4212H-117P is an array of N-channel Power MOSFETs. It is designed to provide optimized performance in a wide range of applications. The device is suitable for use in motor control, power supplies, power converters and audio amplifiers. The device is also capable of switching high power signals and withstands high voltage and current spikes. It utilizes N-channel MOSFETs that provide switching and amplification, making it an ideal device for a variety of applications.

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