IRF6614TRPBF Allicdata Electronics
Allicdata Part #:

IRF6614TRPBFTR-ND

Manufacturer Part#:

IRF6614TRPBF

Price: $ 0.80
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 12.7A DIRECTFET
More Detail: N-Channel 40V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W ...
DataSheet: IRF6614TRPBF datasheetIRF6614TRPBF Datasheet/PDF
Quantity: 4200
1 +: $ 0.80000
10 +: $ 0.77600
100 +: $ 0.76000
1000 +: $ 0.74400
10000 +: $ 0.72000
Stock 4200Can Ship Immediately
$ 0.8
Specifications
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Package / Case: DirectFET™ Isometric ST
Supplier Device Package: DIRECTFET™ ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF6614TRPBF is a high current and low gate-threshold voltage, field-effect transistor (FET) integrated circuit (IC). It is manufactured by International Rectifier (IR). Made using advanced processes and hi-reliability materials, the IRF6614TRPBF is designed to provide a combination of low gate charge and high transconductance. The device is a single highly reliable integrated device, with extremely low power dissipation.

The main application field of the IRF6614TRPBF IC is voltage regulation and power management. It is used in a wide variety of analogue and digital circuits, such as DC-DC converters, AC-DC converters, and switch mode power supplies. The IRF6614TRPBF is also used in motor drives, relay control, and battery charging circuits.

The IRF6614TRPBF is a P-type metal-oxide-semiconductor field-effect transistor (MOSFET), which operates as a switch in accordance with the gate voltage applied to it. It has a single gate channel, which consists of a source and a drain connected together at their closest sides. It has a high current capacity of up to 100A and a low gate threshold voltage of -3.3V. It also features excellent power efficiency and low static drain-source on-resistance.

The IRF6614TRPBF operates according to its principle of operation, which mainly involves applying a voltage at the gate in order to induce electron flow across the source and the drain. When a positive voltage is applied at the gate electrode, the electrons are attracted towards the channel and the resistance between the source and the drain decreases, allowing current to flow. Similarly, when a negative voltage is applied, the electrons are repelled from the channel, increasing resistance between the source and the drain, and thus, blocking current. As such, the gate voltage can be used to control the current flow through the switch.

The excellent switching performance and the low gate-threshold of the IRF6614 make it the ideal choice for many power management and analog applications. This device performs best in conditions where fast switching is desired, as its low gate-threshold ensures that it turns on quickly and turns off even faster. Furthermore, its low power dissipation and low static drain-source resistance make it power-efficient, as well as thermally-stable.

Overall, the IRF6614TRPBF is an excellent choice for a wide variety of power management and analog applications, due to its excellent current capacity, low gate-threshold, and low power consumption. Its excellent switching characteristics make it suitable for fast switching applications, as well as for applications requiring thermal stability.

The specific data is subject to PDF, and the above content is for reference

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