IRF8113TRPBF Allicdata Electronics

IRF8113TRPBF Discrete Semiconductor Products

Allicdata Part #:

IRF8113PBFTR-ND

Manufacturer Part#:

IRF8113TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 17.2A 8-SOIC
More Detail: N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF8113TRPBF datasheetIRF8113TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 17.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF8113TRPBF is a vertical DMOSFET Power Transistor manufactured by International Rectifier. It is designed mainly for use in application circuits such as linear and switching regulators, DC-DC converters, motor drive and lighting applications.The IRF8113TRPBF FET is a vertical Defect MOSFET (DMOS) transistor. It is made up of a vertical DMOS structure which is realized by forming a lightly doped N- well region in the substrate, resulting in an enhanced device performance compared to regular MOSFETs.IRF8113TRPBF has a drain-source voltage rating of 500 V, maximum drain current of 1A and gate threshold voltage of 4V. It also has an additional Gate protect diode used for protection from over-voltage.IRF8113TRPBF is typically used in low voltage switching applications such as linear and switching regulators, DC-DC converters, motor drive and lighting applications. It is ideal for single-supply applications in which the gate voltage is ground referenced.The working principle of IRF8113TRPBF involves two main components: the Gate and the Drain-Source regions. The Gate is the input portion of the device and the voltage applied to it controls the conductivity of the device. The Drain-Source region is the output portion of the device and is a high impedance region. When a negative voltage is applied to the Gate, the channel between the Drain and the Source shorts out thus blocking current flow between them.When a positive voltage is applied to the Gate, a channel is formed and a current will flow from the Drain to the Source. The current will be limited by the resistance of the channel and the amount of current will correspond to the amount of voltage applied to the Gate. This is called the saturation region of the transistor and the resistance of the channel is called the Drain-Source resistance (RDS).Furthermore, IRF8113TRPBF has an integrated Gate protector (diode) connected between the Gate and Source. The diode allows current to flow in the reverse direction to protect the Gate from over-voltage and ESD damage.Overall, IRF8113TRPBF is a reliable and robust power transistor designed to provide reliable performance in a wide range of applications. With its high voltage tolerance and low on-resistance, it is ideal for a wide variety of applications such as linear and switching regulators, DC-DC converters, motor drives, lighting controls and more.

The specific data is subject to PDF, and the above content is for reference

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