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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
ESD129B1W01005E 6327XTSA1TR-ND	ESD129B1W01005E 6327XTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 18V Voltage - Clamping (Max) @ Ipp: 28V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 0.30pF @ 1MHz Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: WLL-2-2	15000 Order	15000+: $0.0349 30000+: $0.0327 75000+: $0.0291
ESD3V3U4ULCE632 7XTSA1TR-ND	ESD3V3U4ULCE632 7XTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 4 Voltage - Reverse Standoff (Typ): 3.3V (Max) Voltage - Clamping (Max) @ Ipp: 11V (Typ) Current - Peak Pulse (10/1000s): 3A (8/20s) Power Line Protection: No Applications: Ethernet, HDMI Capacitance @ Frequency: 0.4pF @ 1MHz Operating Temperature: -40C ~ 125C (TJ) Mounting Type: Surface Mount Package / Case: 8-XFDFN Exposed Pad Supplier Device Package: PG-TSLP-9-1 Base Part Number: ESD3V3	1000 Order	7500+: $0.0911 15000+: $0.0848 37500+: $0.0838
TLE4957C2NE6747 HAMA1-ND	TLE4957C2NE6747 HAMA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	1500+: $1.3628
FS200R12KT4RBOS A1-ND	FS200R12KT4RBOS A1	Infineon Technologies	View more Part Status: Active IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 280A Power - Max: 1000W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 14nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $138.316
FS75R07N2E4BOSA 1-ND	FS75R07N2E4BOSA 1	Infineon Technologies	View more Series: EconoPACK2 Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 75A Power - Max: 250W Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 4.6nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $48.7992
IRGS4607DTRLPBF -ND	IRGS4607DTRLPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 12A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Power - Max: 58W Switching Energy: 140J (on), 62J (off) Input Type: Standard Gate Charge: 9nC Td (on/off) @ 25C: 27ns/120ns Test Condition: 400V, 4A, 100 Ohm, 15V Reverse Recovery Time (trr): 48ns Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	1000 Order	1+: $0
FZ300R12KE3GHOS A1-ND	FZ300R12KE3GHOS A1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 480A Power - Max: 1450W Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 21nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $59.1728
IRGP4790-EPBF-N D	IRGP4790-EPBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: 455W Switching Energy: 2.5mJ (on), 2.2mJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25C: 50ns/200ns Test Condition: 400V, 75A, 10 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	1000 Order	1+: $0
IRG7PK35UD1MPBF -ND	IRG7PK35UD1MPBF	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
IRGIB4615DPBF-N D	IRGIB4615DPBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 15A Switching Energy: 145J (on), 70J (off) Input Type: Standard Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP	1000 Order	1+: $0
IRGP4269DPBF-ND	IRGP4269DPBF	Infineon Technologies	View more Part Status: Obsolete	1000 Order	--
F4100R17ME4B11B PSA1-ND	F4100R17ME4B11B PSA1	Infineon Technologies	View more Series: EconoDUAL 3 Part Status: Active IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 155A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 9nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	6+: $75.4943
FP100R06KE3BOSA 1-ND	FP100R06KE3BOSA 1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Power - Max: 335W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 6.2nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $76.447
F3L400R07ME4B22 BOSA1-ND	F3L400R07ME4B22 BOSA1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 450A Power - Max: 1150W Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A Input Capacitance (Cies) @ Vce: 26nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $107.106
FF600R17ME4PBOS A1-ND	FF600R17ME4PBOS A1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	6+: $197.109
FS900R08A2P2B32 BOSA1-ND	FS900R08A2P2B32 BOSA1	Infineon Technologies	View more Series: * Part Status: Discontinued at Digi-Key	1000 Order	1+: $0
IRLS3034TRL7PPT R-ND	IRLS3034TRL7PP	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 200A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 180nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10990pF @ 40V Power Dissipation (Max): 380W (Tc) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, DPak (6 Leads + Tab), TO-263CB	4800 Order	--
PTF210451EV1-ND	PTF210451E V1	Infineon Technologies	View more Series: GOLDMOS Packaging: Tray Part Status: Obsolete Transistor Type: LDMOS Frequency: 2.17GHz Gain: 14dB Voltage - Test: 28V Current Rating: 1A Current - Test: 500mA Power - Output: 45W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads Supplier Device Package: H-30265-2	1000 Order	1+: $0
BFR193E6327HTSA 1TR-ND	BFR193E6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 10dB ~ 15dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BFR193	24000 Order	--
BFR380FE6327TR- ND	BFR 380F E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz Gain: 9.5dB ~ 13.5dB Power - Max: 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3 Base Part Number: BFR380	1000 Order	1+: $0
BFP740FESDE6327 TR-ND	BFP 740FESD E63 27	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 47GHz Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz Gain: 9dB ~ 31dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 45mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP Base Part Number: BFP740	1000 Order	1+: $0
BCR164FE6327-ND	BCR 164F E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 160MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	1000 Order	1+: $0
BCR555E6327HTSA 1TR-ND	BCR555E6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Base Part Number: BCR555	12000 Order	3000+: $0.0403 6000+: $0.0351 15000+: $0.0298 30000+: $0.028 75000+: $0.0263
IPP075N15N3GXKS A1-ND	IPP075N15N3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 270A Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5470pF @ 75V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $4.1706 10+: $3.7239 100+: $3.0538 500+: $2.4728 1000+: $2.0855
IRF5210LPBF-ND	IRF5210LPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60 mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V Power Dissipation (Max): 3.1W (Ta), 170W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1690 Order	--
IRGP35B60PDPBF- ND	IRGP35B60PDPBF	Infineon Technologies	View more Packaging: Bulk Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A Power - Max: 308W Switching Energy: 220J (on), 215J (off) Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25C: 26ns/110ns Test Condition: 390V, 22A, 3.3 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	--
IRG7PH46UD-EP-N D	IRG7PH46UD-EP	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 390W Switching Energy: 2.61mJ (on), 1.85mJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25C: 45ns/410ns Test Condition: 600V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	25 Order	--
IRFR9024NPBF-ND	IRFR9024NPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power Dissipation (Max): 38W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2319 Order	--
PTFA070601FV4XW SA1-ND	PTFA070601FV4XW SA1	Infineon Technologies	View more Packaging: Tray Part Status: Obsolete Transistor Type: LDMOS Frequency: 760MHz Gain: 19.5dB Voltage - Test: 28V Current - Test: 600mA Power - Output: 60W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37265-2 Base Part Number: PTFA070601	1000 Order	1+: $0
BSF030NE2LQXUMA 1TR-ND	BSF030NE2LQXUMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 24A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 12V Power Dissipation (Max): 2.2W (Ta), 28W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M Package / Case: 3-WDSON	1000 Order	5000+: $0.2711
IRF40H210TR-ND	IRF40H210	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 150A Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5406pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	1000 Order	--
IPB64N25S320ATM A1TR-ND	IPB64N25S320ATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 64A, 10V Vgs(th) (Max) @ Id: 4V @ 270A Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IPP120P04P4L03A KSA1-ND	IPP120P04P4L03A KSA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.2V @ 340A Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V Power Dissipation (Max): 136W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	281 Order	1+: $1.9971 10+: $1.8056 100+: $1.451 500+: $1.1285 1000+: $0.9351
IPAN50R500CEXKS A1-ND	IPAN50R500CEXKS A1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 11.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V Vgs(th) (Max) @ Id: 3.5V @ 200A Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V Power Dissipation (Max): 28W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	353 Order	1+: $0.7182 10+: $0.6369 100+: $0.5032 500+: $0.3902 1000+: $0.3081
IPI90N04S402AKS A1-ND	IPI90N04S402AKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 95A Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9430pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	495 Order	1+: $1.4931 10+: $1.3457 100+: $1.0816 500+: $0.8412 1000+: $0.697
IKB30N65EH5ATMA 1-ND	IKB30N65EH5ATMA 1	Infineon Technologies	View more Series: TrenchStop 5 Part Status: Active RoHS Status: RoHS Compliant IGBT Type: Trench Field Stop Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 188W Switching Energy: 870J (on), 300J (off) Input Type: Standard Gate Charge: 70nC Td (on/off) @ 25C: 24ns/159ns Test Condition: 400V, 30A, 22 Ohm, 15V Reverse Recovery Time (trr): 75ns Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: DPAK (TO-263AB)	1000 Order	1000+: $1.3416
IRLR8721TRPBFTR -ND	IRLR8721TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Power Dissipation (Max): 65W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2000 Order	--
BDP948H6433XTMA 1-ND	BDP948H6433XTMA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 5W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4 Base Part Number: BDP948	1000 Order	1+: $0
BSP60H6327XTSA1 -ND	BSP60H6327XTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10A DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Power - Max: 1.5W Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4 Base Part Number: BSP60	1000 Order	1+: $0
IRFH5010TRPBFTR -ND	IRFH5010TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 13A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 150A Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V Power Dissipation (Max): 3.6W (Ta), 250W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerVDFN	1000 Order	--

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