IPB64N25S320ATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A modern technological world requires more versatility and precision from electrical systems, and transistors like the IPB64N25S320ATMA1 offer a powerful tool for digital applications. FETs, or field-effect transistors, are digital switches that are commonly used to control electrical signals. Of FETs, the MOSFETs (or metal oxide semiconductor field-effect transistors) are the most common of the type and are heavily used in the production of integrated circuits. The IPB64N25S320ATMA1 is a single-gate MOSFET designed for many applications and with a complex operating principle.

Application Fields

The IPB64N25S320ATMA1 is specifically intended for use in efficient power management systems. It can be used to switch power between the load and the voltage source, which requires both low on-state resistance and high switching frequencies. This makes it ideal for controlling the flow of power to high-current applications. They are also used in applications requiring high input impedance, such as in amplifier circuits. This make them suitable as both loads and driving devices.

The IPB64N25S320ATMA1 is a P-channel power MOSFET, meaning its gate is connected to negative voltage. P-channel devices are used in applications like switchmode power supplies and motor drives, because they can handle high voltages up to 80V and current up to 6A. They are also used in high-side switching requirements where low on-state resistance and fast switching times are necessary.

Working Principle

The main function of a MOSFET is to amplify a digital signal – in other words, a switch which is either “on” or “off” depending on the gate voltage applied to the MOSFET. This type of transistor also offers higher input impedance than a bipolar transistor and can operate at higher speeds. In other words, the MOSFET turns on instantly when a gate-source voltage is applied, and stays in an “on” state until the voltage is removed.

The IPB64N25S320ATMA1 is an enhancement-type power MOSFET, meaning that it needs the voltage on the gate to be higher than the voltage on the source to turn “on”. The drain current can be controlled with the applied gate voltage – when the gate voltage is increased, more electrons will flow through the channel and the drain current will increase correspondingly. This makes it ideal for use in power supply control applications.

The IPB64N25S320ATMA1 is also known for its fast switching speed. This is due to its low drain-to-source on-resistance which allows for a low input capacitance. This makes it suitable for use in high frequency applications like AC-DC and DC-DC inverters, motor drives, sensors, and more.

Conclusion

The IPB64N25S320ATMA1 is a single-gate enhancement-type power MOSFET designed for efficient power management and control applications. It is designed to handle up to 80V and 6A, and its low on-state resistance and fast switching speed make it ideal for high-current and high frequency applications. Its gate voltage is connected to negative voltage, making it suitable for use in switchmode power supplies, motor drives, and more.

The specific data is subject to PDF, and the above content is for reference