IRLS3034TRL7PP Allicdata Electronics
Allicdata Part #:

IRLS3034TRL7PPTR-ND

Manufacturer Part#:

IRLS3034TRL7PP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 240A D2PAK7
More Detail: N-Channel 40V 240A (Tc) 380W (Tc) Surface Mount D2...
DataSheet: IRLS3034TRL7PP datasheetIRLS3034TRL7PP Datasheet/PDF
Quantity: 4800
Stock 4800Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package: D2PAK (7-Lead)
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): 380W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 10990pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 200A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRLS3034TRL7PP is a power MOSFET from Infineon Technologies. IRLS3034TRL7PP is a standard level P-Channel enhancement type MOSFET with a four-pin DPAK package. The drain of this MOSFET has a source, a gate and a drain at 4 pins and usually comes in beige plastic packaging.

The IRLS3034TRL7PP is designed to provide efficient switching of high power loads with low power consumption and low on-state resistance. It is designed to withstand a drain-source voltage of up to 30V, a drain current of up to 3.3A and a maximum power dissipation of 13.3 Watts. It has an extremely high junction temperature rating of 250C, making it ideal for applications that require operation in extreme temperatures.

IRLS3034TRL7PP can be used in a variety of applications. It is suitable for use as an alternate driver in consumer electronics products such as digital TVs, digital polarizers, Bluetooth speakers and power supplies. It is also used in consumer products such as phone chargers, gaming consoles, and digital cameras.

In terms of its working principle, the N-channel MOSFET is controlled by the voltage present on its gate. The gate voltage is used to control the drain-source channel, which is a predominant factor in controlling the flow of current between the drain and the source terminals. When the gate voltage is positive compared to source, a current flows through the channel. As the gate voltage is lowered, the current is reduced, ultimately turning off the device.

IRLS3034TRL7PP is designed to provide fast switching performance while maintaining low losses. It offers low gate charge and low input capacitance, making it ideal for low power applications. It also has maximum drain-source breakdown voltage, drain-source on-state resistance and maximum current ratings, making it suitable for a variety of high power applications.

In conclusion, IRLS3034TRL7PP from Infineon Technologies is a standard level P-Channel MOSFET with drain-source breakdown voltage of up to 30V, a drain current of up to 3.3A, and a maximum power dissipation of 13.3 Watts. It has an extremely high junction temperature rating of 250C, making it ideal for applications that require operation in extreme temperatures. It is suitable for use as an alternate driver in consumer electronics products such as digital TVs, digital polarizers, Bluetooth speakers and power supplies, as well as consumer products such as phone chargers, gaming consoles, and digital cameras.

The specific data is subject to PDF, and the above content is for reference

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