Infineon encoder interface - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRL3102-ND	IRL3102	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V Vgs(th) (Max) @ Id: 700mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Power Dissipation (Max): 89W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
IRLZ24NS-ND	IRLZ24NS	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRF1404L-ND	IRF1404L	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 162A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
IRL3715Z-ND	IRL3715Z	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IRL3705Z-ND	IRL3705Z	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V Power Dissipation (Max): 130W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IRFU15N20DPBF-N D	IRFU15N20DPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	--
IRF8010SPBF-ND	IRF8010SPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3830pF @ 25V Power Dissipation (Max): 260W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRF3711LPBF-ND	IRF3711LPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
IRF2807ZLPBF-ND	IRF2807ZLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
IRL3715ZCSPBF-N D	IRL3715ZCSPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRF7805APBF-ND	IRF7805APBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V Vgs (Max): 12V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRF7822PBF-ND	IRF7822PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 16V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRLR8103VTRRPBF -ND	IRLR8103VTRRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 91A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V Power Dissipation (Max): 115W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
BSP129L6327HTSA 1TR-ND	BSP129L6327HTSA 1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V Vgs(th) (Max) @ Id: 1V @ 108A Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 108pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	1000 Order	1+: $0
SPB100N06S2-05- ND	SPB100N06S2-05	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
BB659CH7902XTSA 1TR-ND	BB659CH7902XTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz Capacitance Ratio: 15.3 Capacitance Ratio Condition: C1/C28 Voltage - Peak Reverse (Max): 30V Diode Type: Single Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2 Base Part Number: BB659	1000 Order	1+: $0
BBY5805WH6327XT SA1TR-ND	BBY5805WH6327XT SA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz Capacitance Ratio: 3.5 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10V Diode Type: 1 Pair Common Cathode Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Base Part Number: BBY58	1000 Order	1+: $0
BSC020N025SGINT R-ND	BSC020N025S G	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 110A Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8290pF @ 15V Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	--
IRF1018ESLPBF-N D	IRF1018ESLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 47A, 10V Vgs(th) (Max) @ Id: 4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	--
IRFS4010-7PPBF- ND	IRFS4010-7PPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9830pF @ 50V Power Dissipation (Max): 380W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-7, DPak (6 Leads + Tab), TO-263CB	1000 Order	--
IRFS3004PBF-ND	IRFS3004PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 195A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V Power Dissipation (Max): 380W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
IRFR3505TRPBFTR -ND	IRFR3505TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
T590N16TOFXPSA1 -ND	T590N16TOFXPSA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 1.8kV Current - On State (It (AV)) (Max): 590A Current - On State (It (RMS)) (Max): 1250A Voltage - Gate Trigger (Vgt) (Max): 2.2V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK	1000 Order	1+: $68.4684
BUZ73H3046XKSA1 -ND	BUZ73H3046XKSA1	Infineon Technologies	View more Series: SIPMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
IRLH6224TR2PBFC T-ND	IRLH6224TR2PBF	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 28A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 50A Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 10V Power Dissipation (Max): 3.6W (Ta), 52W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	1000 Order	1+: $0
IDH16G65C6XKSA1 -ND	IDH16G65C6XKSA1	Infineon Technologies	View more Part Status: Active Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 34A (DC) Voltage - Forward (Vf) (Max) @ If: 1.35V @ 16A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 53A @ 420V Capacitance @ Vr, F: 783pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $4.2525 10+: $3.8399 100+: $3.179 500+: $2.7683 1000+: $2.4111
IRFH7190TRPBF-N D	IRFH7190TRPBF	Infineon Technologies	View more Series: FASTIRFET, HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 15A (Ta), 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 49A, 10V Vgs(th) (Max) @ Id: 3.6V @ 100A Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1685pF @ 50V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	1000 Order	1+: $0
IPP030N10N3GHKS A1-ND	IPP030N10N3GHKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.5V @ 275A Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
IPP80P04P4L04AK SA1-ND	IPP80P04P4L04AK SA1	Infineon Technologies	View more Series: Automotive, AEC-Q101, OptiMOS Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V Vgs (Max): +5V, -16V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $0
TT215N22KOFHPSA 1-ND	TT215N22KOFHPSA 1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 2.2kV Current - On State (It (AV)) (Max): 215A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 200mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	3+: $93.3639
DT250N2518KOFHP SA1-ND	DT250N2518KOFHP SA1	Infineon Technologies	View more Part Status: Active	1000 Order	3+: $105.834
T860N30TOFVTXPS A1-ND	T860N30TOFVTXPS A1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 3.6kV Current - On State (It (AV)) (Max): 860A Current - On State (It (RMS)) (Max): 2000A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz Current - Hold (Ih) (Max): 500mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: DO-200AC, K-PUK	1000 Order	1+: $165.293
T3401N36TOFVTXP SA1-ND	T3401N36TOFVTXP SA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Moisture Sensitivity Level (MSL): 1 (Unlimited)	1000 Order	1+: $1.26
IRU3055CQTR-ND	IRU3055CQTR	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Applications: Controller, Intel Pentium IV Voltage - Input: 5V, 12V Number of Outputs: 1 Voltage - Output: 1.08 V ~ 1.85 V Operating Temperature: 0C ~ 70C Mounting Type: Surface Mount Package / Case: 36-BSOP (0.295", 7.50mm Width) Supplier Device Package: 36-QSOP Base Part Number: IRU3055	1000 Order	--
IR3541MSM02TRP- ND	IR3541MSM02TRP	Infineon Technologies	View more Series: * Part Status: Last Time Buy	1000 Order	--
PX8897EDQGR2ER1 240AXUMA1-ND	PX8897EDQGR2ER1 240AXUMA1	Infineon Technologies	View more Series: * Part Status: Last Time Buy	1000 Order	1+: $0
PX3560EDSGR2RB1 322AXUMA1-ND	PX3560EDSGR2RB1 322AXUMA1	Infineon Technologies	View more Series: * Part Status: Last Time Buy	1000 Order	1+: $0
CHL8328-22CRT-N D	CHL8328-22CRT	Infineon Technologies	View more Series: * Part Status: Last Time Buy	1000 Order	--
IFX1763XEJV33XU MA1TR-ND	IFX1763XEJV33XU MA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 20V Voltage - Output (Min/Fixed): 3.3V Voltage Dropout (Max): 0.45V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): 60A Current - Supply (Max): 31mA PSRR: 65dB (120Hz) Control Features: Enable Protection Features: Over Current, Over Temperature, Reverse Polarity Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: PG-DSO-8, e-Pad	1000 Order	2500+: $0.2916 5000+: $0.2777
IP2003A-ND	IP2003A	Infineon Technologies	View more Series: iPOWIR Packaging: Tray Part Status: Obsolete Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 3V Voltage - Input (Max): 13.2V Voltage - Output (Min/Fixed): 0.8V Voltage - Output (Max): 3.3V Current - Output: 40A Frequency - Switching: 300kHz ~ 1MHz Synchronous Rectifier: Yes Operating Temperature: -40C ~ 125C (TJ) Mounting Type: Surface Mount Package / Case: Power Block (LGA) Supplier Device Package: LGA (11x11) Base Part Number: IP2003A	1000 Order	1+: $0

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