Allicdata Part #: | IRFS4010-7PPBF-ND |
Manufacturer Part#: |
IRFS4010-7PPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 190A D2PAK-7 |
More Detail: | N-Channel 100V 190A (Tc) 380W (Tc) Surface Mount D... |
DataSheet: | IRFS4010-7PPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 190A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 110A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 230nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 9830pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 380W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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IRFS4010-7PPBF is a high voltage P-channel enhancement MOSFET from ON Semiconductor Corporation. The semiconductor device comes in a PowerPAK® SO-8 (Small Outline 8) package, is a highly flexible integrated circuit that can be used in many different design applications. The IRFS4010-7PPBF has an on-state resistance of 1.15 ohm and a maximum drain current of 8.2A, working with voltages up to 200V.
A metal oxide semiconductor field effect transistor (MOSFET) is a type of transistor based on the novel principle of using a voltage to control the conductivity of a metal oxide rather than a conventional current. This voltage control makes MOSFETs much more efficient in their ability to control electrical signals. The IRFS4010-7PPBF is a type of enhancement MOSFET, which is noted for its ability to switch efficiently between the on-state and the off-state with only a small amount of input voltage.
The IRFS4010-7PPBF can be used in a wide range of switching applications such as voltage and current regulators, level shifters, switched power supplies, and general purpose switches. It can also be used for many medium power applications that require high switching speed and low on-state resistance. The device can also be used in applications such as medium power amplifiers, high-side switches, and half-bridge circuits.
The IRFS4010-7PPBF is ideal for switching applications with its on-state resistance of only 1.15Ω and its maximum continuous drain current of 8.2A at 25°C. The output voltage swing is also quite impressive in that it can handle voltages up to 200V. The maximum power dissipation is also high at 46W, making it suitable for most applications. The device is also quite reliable, with a durable rugged construction and a guaranteed lifetime of 1000 hours.
The IRFS4010-7PPBF is used in a variety of applications where efficiency, power delivery and switching speed are important. In an automotive application, the MOSFET can be used in circuits that control ignition timing, fuel management, powertrain systems, and more. It can also be used in applications where receiving and transmitting circuits need to have close to zero distortion, such as satellite communications. Lastly, it is also commonly used in battery-powered circuits for high efficiency, low power drain, and reliability.
The IRFS4010-7PPBF is a powerful and highly efficient MOSFET device from ON Semiconductor Corporation, providing solid performance in a variety of applications, from automotive to satellite communications. With its low on-state resistance and high voltage swing capabilities, the IRFS4010-7PPBF is one of the best options for medium power applications and switching applications with high efficiency and low power consumption. Its rugged design and lifetime of 1000 hours also guarantee reliability and make it a great choice for any application.
The specific data is subject to PDF, and the above content is for reference
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