IRL3102 Allicdata Electronics
Allicdata Part #:

IRL3102-ND

Manufacturer Part#:

IRL3102

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 61A TO-220AB
More Detail: N-Channel 20V 61A (Tc) 89W (Tc) Through Hole TO-22...
DataSheet: IRL3102 datasheetIRL3102 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V
FET Feature: --
Power Dissipation (Max): 89W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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Introduction

IRL3102 is an electronic semiconductor that is an integral part of many electronic circuits. It is a type of field-effect transistor (FET), in particular, a single, monolithic MOSFET. This device is commonly used to control electric power, current measurements, and signal switching in various types of circuits. This article will explain the application field and working principles of an IRL3102.

Application Fields and Benefits

The IRL3102 is often used in motor drives, in particular, brushless DC (BLDC) motor drives, as it can be used for linear output control. It is also suitable for power supply circuits, switching circuits, and ANY-bridge circuits. This device can provide significant reductions in power consumption due to its low on-resistance and low gate-source voltage.

It is also often used for applications requiring fast switching, such as in power supplies, UPS systems, and sound equipment. The device has a very low RDS(on) (drain-source on-resistance) -- about 0.08Ω -- which allows for high current handling and fast switching.

MOSFET Construction and Working Principle

The IRL3102 is a single, monolithic MOSFET. MOSFETs are a type of field-effect transistor (FET). A field-effect transistor is a three-terminal device composed of a source, a drain, and a gate (see Figure 1). A voltage applied to the gate changes the conductivity of the underlying semiconductor material and forms an electric field.

Figure 1: IRL3102 Field-Effect Transistor

IRL3102FET

When the gate voltage is higher than the threshold voltage, it creates a thin conducting layer between the source and the drain. This layer, known as inversion layer, is composed of electrons generated by the electric field. The electrons cause the current to flow between the source and the drain.

The on-resistance of the MOSFET is dependent on the width of the inversion layer. A more negative gate voltage will produce a wider inversion layer and a lower on-resistance. This is why the device has a low gate-source voltage and a low on-resistance. Thus, it can provide high current handling and fast switching. At the same time, the device is also able to minimize power consumption due to the low on-resistance.

Conclusion

The IRL3102 is an electronic semiconductor that is commonly used in various types of circuits, such as motor drives, power supplies, and switch circuits. It is a type of field-effect transistor, in particular, a single, monolithic MOSFET. Its low on-resistance and low gate-source voltage allow for high current handling and fast switching, while also minimizing power consumption. The IRL3102 is an essential component for many electronic circuits, and its application field and working principles have been discussed in this article.

The specific data is subject to PDF, and the above content is for reference

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