IRFH7190TRPBF

Series:	FASTIRFET™, HEXFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	15A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	7.5 mOhm @ 49A, 10V
Vgs(th) (Max) @ Id:	3.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	39nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1685pF @ 50V
FET Feature:	--
Power Dissipation (Max):	3.6W (Ta), 104W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PQFN (5x6)
Package / Case:	8-PowerTDFN

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IRFH7190TRPBF is an advanced N-Channel, depletion MOSFET transistor designed using a latest processing technology to achieve the most efficient performance within a wide working temperature range. Manufactured by International Rectifier Corporation, it is offered in a standard TO-220FP package to deliver a high power rating combined with excellent controlled gate threshold voltage.The IRFH7190TRPBF transistor is mainly used in power application. Its main feature is that it has the capability to operate at high temperatures ranging from -55°C to 175°C. It also has an Extended on-state drain current value of -170A. This current value helps it to easily support the high power supply applications.The IRFH7190TRPBF transistor has a wide range of applications including but not limited to DC-DC converters, isolated switches, gate drivers, pulse generators, and sunroof systems. Its temperature stability helps in eliminating the need for temperature compensation in applications that involve temperature cycling. The low gate threshold voltage helps in minimizing the switching time and making it suitable for quick power conversions. The high drain current rating makes it ideal for high power applications, such as in AC adapters, power supplies, and amplifiers.The IRFH7190TRPBF transistor has a low output capacitance and low gate charge that makes it suitable for high speed switching applications. It also has a high throughput and fast switching response which makes it difficult to shoot-through. The device also has an extremely low on-resistance which helps to reduce conduction losses during switching operations.The IRFH7190TRPBF transistor has a working principle which involves the flow of current through the transistor. It operates by controlling the voltage at the gate. When the voltage applied on the gate is dropped, the flow of current is stopped. At the same time, if the voltage applied on the gate is increased, the drain-to-source current continues to flow. This makes the device switch between two states according to the voltage applied in the gate.The IRFH7190TRPBF transistor has a high voltage specification which makes it suitable for intensive operation with high voltage levels. It also has a high switching speed which makes it suitable for fast switching operations. In addition, it is insulated for safety reasons and has a large-sized body that ensures maximum heat dissipation during high temperature operations.All these features of the IRFH7190TRPBF make it one of the most widely used transistors in the field of electronics. Its applications range from the automotive industry to the power sector, making it an invaluable transistor for a wide range of applications.

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