IRF8010SPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	260W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3830pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	120nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	15 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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?IRF8010SPBF is a single N-channel enhancement mode high-power metal-oxide-semiconductor field-effect transistor (MOSFET). It is released by Infineon Technologies and widely used in power management, hot swap and other power management applications.The IRF8010SPBF is an ideal component for advanced solutions and a component widely used in motor control, lighting, power supply, battery management and other power management applications field. Its main applications include hot swap, E-fuse, power supply, motor control and other power management field.The IRF8010SPBF is a MOSFET. It works by modulating the amount of current flowing through the device and is commonly used to switch or amplify power. A MOSFET consists of four regions called source, gate, body and drain. The source, gate and drain are separated from each other by thin layers of an insulating material. When the gate voltage is equal to the source voltage, no current can flow through the device. However, when the gate voltage is higher than the source voltage, a channel is created and current will flow through the device. The higher the gate voltage, the wider the channel, thereby increasing the amount of current flowing through the device. The gate voltage is varied by applying a voltage of the opposite polarity relative to the source voltage to the gate terminal. The IRF8010SPBF has many advantages in the power management applications. The device has very low power and low gate charge, which allows for lower power losses and higher efficiency. In addition, the device has a very low on-resistance, which provides higher efficiency and lower switching losses. Additionally, the device has a fast switching speed, which reduces power losses and increases efficiency. Furthermore, the device has a wide operating temperature range, allowing for reliable operation even in harsh environments. Finally, the device also offers high junction temperature rating, which ensures reliable operation even in high currents.In conclusion, the IRF8010SPBF is an ideal choice for power management applications. It has low power and low gate charge, low on-resistance, fast switching speed, a wide operating temperature range and a high junction temperature rating. All these characteristics make it ideal for applications such as hot swap, E-fuse, power supply, motor control, and lighting control.

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