Allicdata Part #: | IRF8010SPBF-ND |
Manufacturer Part#: |
IRF8010SPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 80A D2PAK |
More Detail: | N-Channel 100V 80A (Tc) 260W (Tc) Surface Mount D2... |
DataSheet: | IRF8010SPBF Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 260W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3830pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 45A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
Description
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?IRF8010SPBF Application Field and Working Principle
IRF8010SPBF is a single N-channel enhancement mode high-power metal-oxide-semiconductor field-effect transistor (MOSFET). It is released by Infineon Technologies and widely used in power management, hot swap and other power management applications.The IRF8010SPBF is an ideal component for advanced solutions and a component widely used in motor control, lighting, power supply, battery management and other power management applications field. Its main applications include hot swap, E-fuse, power supply, motor control and other power management field.IRF8010SPBF working principle
The IRF8010SPBF is a MOSFET. It works by modulating the amount of current flowing through the device and is commonly used to switch or amplify power. A MOSFET consists of four regions called source, gate, body and drain. The source, gate and drain are separated from each other by thin layers of an insulating material. When the gate voltage is equal to the source voltage, no current can flow through the device. However, when the gate voltage is higher than the source voltage, a channel is created and current will flow through the device. The higher the gate voltage, the wider the channel, thereby increasing the amount of current flowing through the device. The gate voltage is varied by applying a voltage of the opposite polarity relative to the source voltage to the gate terminal. Advantages of IRF8010SPBF
The IRF8010SPBF has many advantages in the power management applications. The device has very low power and low gate charge, which allows for lower power losses and higher efficiency. In addition, the device has a very low on-resistance, which provides higher efficiency and lower switching losses. Additionally, the device has a fast switching speed, which reduces power losses and increases efficiency. Furthermore, the device has a wide operating temperature range, allowing for reliable operation even in harsh environments. Finally, the device also offers high junction temperature rating, which ensures reliable operation even in high currents.Conclusion
In conclusion, the IRF8010SPBF is an ideal choice for power management applications. It has low power and low gate charge, low on-resistance, fast switching speed, a wide operating temperature range and a high junction temperature rating. All these characteristics make it ideal for applications such as hot swap, E-fuse, power supply, motor control, and lighting control.The specific data is subject to PDF, and the above content is for reference
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