IRL3715Z

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The IRL3715Z is a silicon n-channel MOSFET developed and produced by Infineon Technologies AG. This device is particularly suitable for switching applications in server power conversion and various other electronic systems. The device has an extended temperature range of -55 to 150 ºC, making it suitable for applications in harsh environments. It also has a high current capability of 60A, a low gate charge of 1.5 nC, and a thermally enhanced package for improved heat dissipation.

Features and Benefits

• 60A continuous drain current (ID)
• 90V drain-to-source break down voltage (BVDSS)
• 1.5 nC gate charge (QG)
• High power dissipation of 144W
• Rugged TO-220 (DPAK) standard package
• Best-in-class extended temperature range of -55 to 150 ºC
• Industry standard pin configuration
• Excellent avalanche performance

Applications

The IRL3715Z is especially suitable for switching applications in server power conversion and various other electronic systems. It can be used in high power DC-DC converters for system buses, negative and positive output converters, resonant converters, ON/OFF line voltage regulators, ON/OFF line driver circuits, and other applications with high power switching requirements.

Working Principle

The IRL3715Z is an n-channel MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. It consists of a source, drain, gate, and body terminals. When a positive voltage is applied to the gate, an electric field is generated across the gate dielectric, which attracts electrons and forms an inversion layer at the semiconductor surface. This inversion layer consists of electrons and acts like a conductive channel between the source and drain terminals, allowing current to flow.

When the drain current increases, the voltage across the device increases, known as the drain-source voltage (VDS). This voltage is limited by the MOSFET\'s Channel Breakdown Voltage, where the device can no longer conduct current and becomes cutoff. When the drain current decreases, the drain-source voltage drops and the device enters the triode region, where it begins to act like a resistor instead of a switch.

The IRL3715Z also has a low gate threshold voltage (VGS(th)), which is the voltage required for the device to begin conducting current. This makes the IRL3715Z an ideal choice for applications that require low operating voltages, such as battery-powered devices.

In addition, the IRL3715Z has a rated total gate charge (QG) of 1.5 nC, which is significantly lower than other MOSFETs in the same class. This lower gate charge helps reduce switching losses and provides better efficiency in high-frequency switching applications.

Conclusion

The IRL3715Z is an excellent choice for switching applications in server power conversion and other systems. It has a high current capability, extended temperature range, and low gate charge, making it well suited for high power, high frequency applications. Moreover, the device has an industry standard pin configuration and rugged TO-220 (DPAK) package, which makes it easy to integrate into any design.

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