Allicdata Part #: | IRL3715ZCSPBF-ND |
Manufacturer Part#: |
IRL3715ZCSPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 50A D2PAK |
More Detail: | N-Channel 20V 50A (Tc) 45W (Tc) Surface Mount D2PA... |
DataSheet: | IRL3715ZCSPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF 3715ZCSPBF is a 75V N-channel power MOSFET designed for high power applications. It is a through-hole device in a TO-220AB package with a typical maximum power dissipation of 75W. The device is optimized for high efficiency, low gate charge, low forward voltage drop, and low on-state resistance. The IRF 3715ZCSPBF has a maximum drain current of 24A, a maximum drain-source voltage of 75V, and a maximum junction temperature of 175°C. Its on-resistance (RDS(on)) is specified at a gate-source voltage (VGS) of 10V, but it can be further reduced to lower gate voltages, such as 6V. The device can support single-pulse avalanche energy ratings up to 40mJ.
The IRF 3715ZCSPBF is most commonly used in applications such as switching and linear regulation, motor control, battery management, and DC-to-DC converters. The device is ideal for high current, high voltage, and low voltage applications. Its low gate charge allows for smaller gate drive circuits and higher efficiency. The device is also suitable for power switching applications requiring high voltage and low RDS(on), such as synchronous rectifiers, inverters, and servo motors. Its low RDS(on) and excellent temperature stability make it ideal for automotive applications.
The working principle of the IRF 3715ZCSPBF is based on the physical structure of a MOSFET. The device consists of an insulated structure made of four layers of doped silicon. The layer closest to the source is an N-type layer, and the layer closest to the drain is a P-type layer. A thin oxide layer lies between them, and the body of the device is an N-type layer. When a voltage is applied to the gate, it creates an electric field which induces electrons in the N-type layer, creating a conductive channel between the source and the drain. These electrons are then used to carry the current through the MOSFET.
The IRF 3715ZCSPBF is designed to provide high efficiency and low power losses for applications requiring high performance. Its excellent temperature stability and low on-resistance make it ideally suited for automotive and power switching applications. The device is available in a wide range of packages and is RoHS compliant. It is also available in lead-free versions, making it an ideal choice for environmentally responsible designs.
The specific data is subject to PDF, and the above content is for reference
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