IRFS3004PBF Allicdata Electronics
Allicdata Part #:

IRFS3004PBF-ND

Manufacturer Part#:

IRFS3004PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 195A D2PAK
More Detail: N-Channel 40V 195A (Ta) 380W (Tc) Surface Mount D2...
DataSheet: IRFS3004PBF datasheetIRFS3004PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 380W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IRFS3004PBF is a trench field-effect transistor (FET) manufactured by Infineon Technologies. It is a 60V N-channel FET featuring low on-resistance, low gate threshold and fast switching for use in a variety of applications such as power management and load switching in computer and consumer electronics. Due to its low on-resistance and low gate threshold, the IRFS3004PBF is an ideal choice for switching at high frequencies.

The IRFS3004PBF is a single transistor and has an RDS (on) rating of 0.037 Ohms at 4.5V. It has an avalanche energy rating of 3.0 mJ and is available in an SO-8 package. The transistor is also RoHS compliant, making it suitable for a variety of applications.

The IRFS3004PBF is designed primarily for use in power management and load switching applications. These applications may include motor control, DC-DC conversion, LED dimming or any other application where efficient and fast switching is desired. The device is also suitable for use in high frequency switching applications since it has a low RDS (on) rating and a low gate threshold voltage. This results in faster switching times and reduced power consumption.

The IRFS3004PBF works on a simple theory. It has an N-channel, which when given a certain voltage, allows current to pass through it. When a suitable voltage is applied to the gate, the channel is closed and current can no longer pass through the device. The gate terminal also has its own threshold potential, or VGS(th), which is the voltage at which the channel opens and allows current to pass through it. The IRFS3004PBF has a very low VGS(th) of 2V. This means that a smaller voltage is required to activate the channel, resulting in faster switching times and lower power consumption.

In addition, the IRFS3004PBF has a RDS(on) rating of 0.037 ohms at 4.5V. This means that when a given voltage is applied to the gate, the on-state resistance of the device will be at 0.037 ohms. The lower the RDS(on), the lower the amount of power lost due to heat. This results in more efficient power management.

The IRFS3004PBF is specifically designed for power management and load switching applications. It is suitable for use in any application where fast switching and low on-state resistance are desired. The low gate threshold voltage of the IRFS3004PBF allows for faster switching which results in lower power consumption, and the low RDS(on) rating reduces the amount of power lost due to heat. The device is also RoHS compliant, making it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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