IRFU15N20DPBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFU15N20DPBF is a MOSFET (short for metal-oxide-semiconductor field-effect transistor) type of transistor. It is a single FET with N-channel type of flow. The “IRF” in the name stands for “International Rectifier”, which is the original manufacturer of this type of semiconductor. A MOSFET is a type of switch that is used to control and regulate current and voltage flow by changing the size of the current by opening and closing the gate that is attached to the MOSFET.

The IRFU15N20DPBF is a “P-channel” type of MOSFET. A P-channel MOSFET is one which has the source and the drain connections on the same side of the chip while the gate is on the opposite side. This type of MOSFET typically uses a higher voltage and lower current than the N-channel counterpart. The “DPBF” in the name stands for “dual-package bridgeFET” and indicates that the MOSFET is designed to be used in a circuit configuration called a bridge. A bridge FET is a type of MOSFET that is used to switch current in both directions, something which is essential for certain types of circuit design.

IRFU15N20DPBF MOSFETs can be used for a variety of applications. One of the most common applications for these devices is in power conversion circuits. These circuits are often used in regulating the power output from high voltage sources, such as solar cells or batteries. They are also commonly used in switchmode power supplies, motor control, and motor drive circuits. MOSFETs can also be used in switching circuits for telecom and data communication applications, as well as in high speed logic circuits.

The working principle of the IRFU15N20DPBF is fairly simple. When the gate voltage is applied, it induces an electric field with enough strength to create a current path between the source and the drain. This current is then controlled by adjusting the gate voltage accordingly. When the gate is open the drain current increases, and when the gate is closed the current decreases. The MOSFET is able to act as a switch in this manner, allowing an analogue voltage to control the current.

The IRFU15N20DPBF can operate at high frequencies, making it suitable for RF applications where the switching times need to be very short. Additionally, it has a very low forward gate threshold voltage (VGS) of just 4V, making it suitable for use in circuits that require small logic signals. This makes it ideal for use in analog and digital logic circuits.

In summary, the IRFU15N20DPBF is a single FET with N-channel type of flow and is a P-channel MOSFET, with the source and drain connections on the same side of the chip while the gate is on the opposite side. It is designed to be used in a bridge configuration, making it suitable for power conversion and motor control circuits. It has a low VGS and can be used in RF applications due to its high frequency capability. All of these features make it a highly effective transistor for many different circuit applications.

The specific data is subject to PDF, and the above content is for reference