| Allicdata Part #: | IRF7805APBF-ND |
| Manufacturer Part#: |
IRF7805APBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 13A 8-SOIC |
| More Detail: | N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-S... |
| DataSheet: |  IRF7805APBF Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 11 mOhm @ 7A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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IRF7805PBF is a type of single N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is widely used for power switching applications. IRF7805PBF has a 55V drain-source voltage rating and is capable of driving currents up to 12A. It is also capable of switching frequencies up to 100kHz, making it ideal for high speed switching applications.The N-channel MOSFETs like IRF7805PBF works on the principle of positive gate voltage. It consists of an insulated gate with a source and drain connected to the gate. When the gate voltage is increased, charge becomes trapped on the gate and is transferred to the source and drain. This creates a conducting channel between the source and drain. When the gate voltage is decreased, the charge is transferred away from the source and drain and the channel is no longer conducting. This is how the MOSFETs switch between conducting and non-conducting states.IRF7805PBF is commonly used in power switching applications such as motor control, power converters, power supplies, and automotive applications. It is ideally suited for high frequency switching applications due to its fast switching speeds. It is also capable of meeting strict EMI (Electromagnetic Interference) requirements, making it suitable for use in sensitive electronic systems.The IRF7805PBF offers a number of advantages over other types of power switches, such as lower conduction losses, higher BoM (Bill of Materials) count efficiency, lower noise and minimal switching losses. Furthermore, it is relatively robust and can withstand voltage transients up to ±20V.In comparison to other types of MOSFETs, such as V-MOS and A-MOS, the IRF7805PBF also offers a number of advantages. For example, it is capable of handling higher drain current levels and it does not have the same susceptibility to varying gate voltage that other MOSFETs may have. Furthermore, its small footprint and low insertion losses make it an ideal choice for high power electronics applications.Overall, the IRF7805PBF is a versatile and reliable power switch that is suitable for a range of applications. Its combination of fast switching speeds, low conduction losses, and robust design make it a popular choice.
The specific data is subject to PDF, and the above content is for reference
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