IRF3711LPBF

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The IRF3711LPBF is a Single P-Channel Power MOSFET from the IRF37XX series offered by Infineon Technologies. It is a high performance transistor ideally suited for switching applications with high current and low voltage. The device provides a wide range of features including low gate charge, fast switching speed, and low on-resistance. This makes the IRF3711LPBF ideal for a variety of applications including load switch, DC/DC converters, battery management, automotive, and industrial.

The IRF3711LPBF has a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 30A. It is constructed with a 25V gate-source voltage (VGS) and a gate charge (QG) of 22.3nC. The device also has a low on-resistance (RDSon) of 0.0045Ω. Additionally, it has a maximum junction-to-ambient thermal resistance of 3.2°C/W for the TO-220 package.

The IRF3711LPBF features a Dual N-Channel architecture that provides superior switching speed and low gate charge capability. It is constructed with a buried PFET layer and a top gate to provide low gate charge, low RDSon, and low gate resistance. The device is rated for high switching currents and is capable of operating at very low drain-source voltages. Additionally, the device can be operated at higher frequencies to increase efficiency.

The IRF3711LPBF is a simple and effective device for high current switching applications. It provides superior switching performance at low voltages and can be used in a variety of applications. The device is easily integrated into a wide range of systems and provides a reliable switching solution.

The IRF3711LPBF can be used in a variety of applications including load switches, DC/DC converters, battery management, automotive, and industrial electronics. It is an ideal device for these types of applications due to its low gate charge, fast switching speed, and low on-resistance. Additionally, the device is rated for high switching currents and can be used in high frequency applications.

The IRF3711LPBF is a single p-channel power MOSFET from Infineon Technologies and is ideal for high current switching applications. Its advanced dual N-Channel architecture offers superior switching speed and low gate charge. Additionally, the device offers low RDSon, low on-resistance, and high current rating. It can be integrated into a variety of applications including load switches, DC/DC converters, battery management, automotive, and industrial electronics.

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