IRLZ24NS

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	480pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	60 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	18A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRLZ24NS is a type of metal oxide semiconductor field effect transistor (MOSFET), specifically, a single-gate, stock cell, all-diffused P-Channel type MOS field effect transistor. It is widely used in various applications, such as in the areas of power distribution, lighting, and communications. Understanding the working principles and application fields of IRLZ24NS is crucial for its successful implementation into any project.

Working Principle of IRLZ24NS

The IRLZ24NS MOSFET is a voltage-controlled field-effect transistor which operates on the principle of a layer of thin oxide on the gate protecting it from the substrate. This thin oxide layer then modulates the drain and source currents in response to voltage applied to the gate. This means that the IRLZ24NS MOSFET\'s current is controlled by the Gate-Source Voltage (VGS). As VGS increases, the drain and source currents also increases, and vice versa. IRLZ24NS is a single-gate MOSFET, meaning it has only one gate that needs to be charged in order to modulate the drain and source currents.The characteristics of IRLZ24NS make it suitable for many different applications, from power distribution and lighting systems, to communications and digital circuits. The IRLZ24NS MOSFET has a low on-resistance (RDSon) and low gate-source voltage (VGS), both of which make it an ideal choice for applications that require low power dissipation and high current efficiency. Additionally, its low threshold voltage (Vth) makes it ideal for applications that require faster switching times. Moreover, the IRLZ24NS MOSFET has a decent input capacitance (Ciss), meaning it can be used in applications that require good input resistance and capacitance characteristics, such as in AC circuits.

Application Fields of IRLZ24NS

IRLZ24NS\'s wide range of characteristics make it suitable for a variety of applications. Its low on-resistance, low gate-source voltage, low threshold voltage and decent input capacitance make it ideal for applications in power distribution and lighting systems, communications and digital circuits.In power distribution and lighting systems, the low RDSon of the IRLZ24NS MOSFET enables the load to be switched with minimal power dissipation. Its VGS and Vth characteristics also make it ideal for applications where the load needs to switch quickly without any delay. Additionally, its capacitance can help reduce the chances of inductive damage due to switching applications.In communications and digital circuits, the IRLZ24NS MOSFET is ideal for applications that require fast switching times and low power consumption. Its low RDSon helps reduce the amount of power consumed by the load, and its Vth and input capacitance help ensure that the circuit works as quickly and efficiently as possible.Overall, the IRLZ24NS MOSFET is a versatile device that is suitable for a wide range of applications. Its low RDSon, low VGS and Vth, and decent input capacitance make it ideal for various power distribution, lighting, communications and digital circuits.

ConclusionIRLZ24NS is a type of MOSFET that is widely used in various applications. It has a low on-resistance, low gate-source voltage, low threshold voltage and decent input capacitance, which make it ideal for applications in power distribution, lighting, communications and digital circuits. Understanding the working principles and application fields of IRLZ24NS is essential for its successful implementation.

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