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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TC222S16F133NAC KXUMA1-ND	TC222S16F133NAC KXUMA1	Infineon Technologies	View more Series: * Part Status: Discontinued at Digi-Key	1000 Order	1+: $0
XC167CI16F40FBB KXUMA1-ND	XC167CI16F40FBB KXUMA1	Infineon Technologies	View more Series: XC16x Packaging: Tape & Reel (TR) Part Status: Not For New Designs Core Processor: C166SV2 Core Size: 16-Bit Speed: 40MHz Connectivity: CANbus, EBI/EMI, IC, LINbus, SPI, UART/USART Peripherals: PWM, WDT Number of I/O: 103 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V Data Converters: A/D 16x8/10b Oscillator Type: Internal Operating Temperature: -40C ~ 125C (TA) Package / Case: 144-LQFP Supplier Device Package: 144-TQFP (20x20)	1000 Order	1+: $0
FS30R06W1E3BOMA 1-ND	FS30R06W1E3BOMA 1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Power - Max: 150W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 1.65nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $19.2591 10+: $17.761
FP15R06W1E3B11B OMA1-ND	FP15R06W1E3B11B OMA1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 22A Power - Max: 81W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 830pF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	24+: $18.4613
IHW20N120R2-ND	IHW20N120R2	Infineon Technologies	View more Series: TrenchStop Packaging: Tube Part Status: Obsolete IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A Power - Max: 330W Switching Energy: 1.2mJ (off) Input Type: Standard Gate Charge: 143nC Td (on/off) @ 25C: -/359ns Test Condition: 600V, 20A, 15 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	1000 Order	--
SGP04N60XKSA1-N D	SGP04N60XKSA1	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 9.4A Current - Collector Pulsed (Icm): 19A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A Power - Max: 50W Switching Energy: 131J Input Type: Standard Gate Charge: 24nC Td (on/off) @ 25C: 22ns/237ns Test Condition: 400V, 4A, 67 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3	1000 Order	1+: $0
FS50R07N2E4B11B OSA1-ND	FS50R07N2E4B11B OSA1	Infineon Technologies	View more Series: EconoPACK 2 Part Status: Last Time Buy IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 70A Power - Max: 190W Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 3.1nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	30+: $39.9909
IRG7PH42UD1MPBF -ND	IRG7PH42UD1MPBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 313W Switching Energy: 1.21mJ (off) Input Type: Standard Gate Charge: 270nC Td (on/off) @ 25C: -/270ns Test Condition: 600V, 30A, 10 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	1000 Order	1+: $0
IRGP4262DPBF-ND	IRGP4262DPBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 24A Power - Max: 250W Switching Energy: 520J (on), 240J (off) Input Type: Standard Gate Charge: 70nC Td (on/off) @ 25C: 24ns/73ns Test Condition: 400V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	--
BSM30GD60DLCBOS A1-ND	BSM30GD60DLCBOS A1	Infineon Technologies	View more Part Status: Not For New Designs Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Power - Max: 135W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A Current - Collector Cutoff (Max): 500A Input Capacitance (Cies) @ Vce: 1.3nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $49.3359
FZ400R12KP4HOSA 1-ND	FZ400R12KP4HOSA 1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 400A Power - Max: 2400W Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 28nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	10+: $63.2451
IRG7CH42UEF-ND	IRG7CH42UEF	Infineon Technologies	View more Packaging: Bulk Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 5A Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25C: 25ns/229ns Test Condition: 600V, 30A, 10 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
FF450R12KE4PHOS A1-ND	FF450R12KE4PHOS A1	Infineon Technologies	View more Series: C Part Status: Active IGBT Type: Trench Field Stop Configuration: Half Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 450A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 450A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 28nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	8+: $106.306
F4250R17MP4B11B PSA1-ND	F4250R17MP4B11B PSA1	Infineon Technologies	View more Series: EconoDUAL 3 Part Status: Active IGBT Type: Trench Field Stop Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 370A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 250A Current - Collector Cutoff (Max): 3mA Input Capacitance (Cies) @ Vce: 21nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	6+: $138.284
IRF540NPBF-ND	IRF540NPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 44 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V Power Dissipation (Max): 130W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3 Base Part Number: IRF540	11 Order	--
IRFS3006TRL7PPT R-ND	IRFS3006TRL7PP	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 168A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8850pF @ 50V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, DPak (6 Leads + Tab), TO-263CB	10000 Order	--
IPB60R099C6ATMA 1TR-ND	IPB60R099C6ATMA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 37.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99 mOhm @ 18.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.21mA Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V Power Dissipation (Max): 278W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $2.3052
IRF7530TRPBFTR- ND	IRF7530TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5.4A Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V Power - Max: 1.3W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8 Base Part Number: IRF7530PBF	1000 Order	4000+: $0.2127
BFP540FE6327INT R-ND	BFP 540F E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 20dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP Base Part Number: BFP540	1000 Order	1+: $0
BFP540FESDE6327 INTR-ND	BFP540FESDE6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 20dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP Base Part Number: BFP540	1000 Order	--
SMBT2907AE6327H TSA1TR-ND	SMBT2907AE6327H TSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 330mW Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: MBT2907A	39000 Order	3000+: $0.0231 6000+: $0.0201 15000+: $0.0171 30000+: $0.0161 75000+: $0.0151 150000+: $0.0134
BCR142E6327HTSA 1TR-ND	BCR142E6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Base Part Number: BCR142	18000 Order	3000+: $0.0224 6000+: $0.0202 15000+: $0.0176 30000+: $0.0158 75000+: $0.0141 150000+: $0.0117
IKD10N60RFATMA1 TR-ND	IKD10N60RFATMA1	Infineon Technologies	View more Series: TrenchStop Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: 150W Switching Energy: 190J (on), 160J (off) Input Type: Standard Gate Charge: 64nC Td (on/off) @ 25C: 12ns/168ns Test Condition: 400V, 10A, 26 Ohm, 15V Reverse Recovery Time (trr): 72ns Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Base Part Number: *KD10N60	1000 Order	2500+: $0.4984 5000+: $0.4922
IRF2805PBF-ND	IRF2805PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 104A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V Power Dissipation (Max): 330W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	3218 Order	--
IPL60R299CPAUMA 1TR-ND	IPL60R299CPAUMA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 11.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 440A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Power Dissipation (Max): 96W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	3000 Order	3000+: $0.9484
BSL314PEL6327HT SA1TR-ND	BSL314PEL6327HT SA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 1.5A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2V @ 6.3A Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V Power - Max: 500mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	1000 Order	1+: $0
IRLHS6276TR2PBF CT-ND	IRLHS6276TR2PBF	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.5A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10A Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 1.5W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerVDFN Supplier Device Package: 6-PQFN Dual (2x2) Base Part Number: IRLHS6276PBF	1000 Order	--
IKQ40N120CH3XKS A1-ND	IKQ40N120CH3XKS A1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Power - Max: 500W Switching Energy: 3.3mJ (on), 1.3mJ (off) Input Type: Standard Gate Charge: 190nC Td (on/off) @ 25C: 30ns/300ns Test Condition: 400V, 40A, 12 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-46	1000 Order	1+: $5.5944 10+: $5.052 100+: $4.1825 500+: $3.6421
IRF7204PBFTR-ND	IRF7204TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRF7416GTRPBFTR -ND	IRF7416GTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
BSZ035N03LSGATM A1TR-ND	BSZ035N03LSGATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 15V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.3613
BSC123N10LSGATM A1TR-ND	BSC123N10LSGATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 10.6A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.4V @ 72A Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 50V Power Dissipation (Max): 114W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	1000 Order	5000+: $0.5298
IRG4RC10UDTRLPT R-ND	IRG4RC10UDTRLP	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 8.5A Current - Collector Pulsed (Icm): 34A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Power - Max: 38W Switching Energy: 140J (on), 120J (off) Input Type: Standard Gate Charge: 15nC Td (on/off) @ 25C: 40ns/87ns Test Condition: 480V, 5A, 100 Ohm, 15V Reverse Recovery Time (trr): 28ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Base Part Number: IRG4RC10UDPBF	1000 Order	3000+: $0.5349
IPA60R385CPXKSA 1-ND	IPA60R385CPXKSA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 340A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V Power Dissipation (Max): 31W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	545 Order	1+: $1.7829 10+: $1.6078 100+: $1.2919 500+: $1.0048 1000+: $0.8325
IPAN80R360P7XKS A1-ND	IPAN80R360P7XKS A1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 280A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	400 Order	1+: $1.8774 10+: $1.6941 100+: $1.3615 500+: $1.0589 1000+: $0.8774
IRGS6B60KPBF-ND	IRGS6B60KPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 26A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Power - Max: 90W Switching Energy: 110J (on), 135J (off) Input Type: Standard Gate Charge: 18.2nC Td (on/off) @ 25C: 25ns/215ns Test Condition: 400V, 5A, 100 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Base Part Number: IRGS6B60KPBF	1000 Order	1000+: $0.5813
BCX5516E6433HTM A1TR-ND	BCX5516E6433HTM A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89 Base Part Number: BCX55	1000 Order	1+: $0
BCX55E6327HTSA1 TR-ND	BCX55E6327HTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89 Base Part Number: BCX55	1000 Order	1+: $0
BCP49H6359XTMA1 TR-ND	BCP49H6359XTMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 100A, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 1.5W Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4 Base Part Number: BCP49	1000 Order	1+: $0
BSC010N04LSIATM A1TR-ND	BSC010N04LSIATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 37A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.05 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	1000 Order	--

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