IRF2805PBF Allicdata Electronics
Allicdata Part #:

IRF2805PBF-ND

Manufacturer Part#:

IRF2805PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 75A TO-220AB
More Detail: N-Channel 55V 75A (Tc) 330W (Tc) Through Hole TO-2...
DataSheet: IRF2805PBF datasheetIRF2805PBF Datasheet/PDF
Quantity: 3218
Stock 3218Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 330W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 104A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRF2805PBF is a field-effect transistor, specifically a metal–oxide–semiconductor field-effect transistor (MOSFET). It belongs to the single-level FETs family and is designed for switching and amplification applications. It is an advanced design with excellent performance characteristics, including high input/output impedance, low on-state resistance, fast switching times, and dynamic control range.

The IRF2805PBF is a low-voltage, high-current, P-channel power MOSFET. It has an absolute drain-source voltage rating of 100V and a continuous drain current of -85A. The device features a low on-resistance of 16 milliohms and a fast switching speed of 1.2nS. It is suitable for a wide range of applications, including power-supply regulation, motor control, audio amplification, and other automotive and general-purpose switching applications.

The IRF2805PBF is composed of different layers of doped silicon, which form a conductive channel between source and drain terminals. When a voltage is applied to the gate terminal, it changes the threshold voltage of the MOSFET, which controls the conduction of current between the source and drain terminals. The P-channel MOSFET (IRF2805PBF) acts like an electrical switch; the source is connected to the drain when a low voltage is applied to the gate and the current flowing from source to drain is blocked when a small voltage is applied to the gate terminal.

The IRF2805PBF also features fast switching times for high frequency switching applications. Its low on-resistance and high peak drain current make it suitable for high power applications. It also has a built-in thermal shutdown function for protection against over-temperature conditions. The device can be operated in temperatures ranging from -55 °C to +175 °C.

Overall the IRF2805PBF is a versatile switch, amplifier, and regulator component that can be used in a wide variety of applications. Its ability to handle high current and low on-resistance make it an ideal component for power applications. It is also suitable for high-frequency switching applications and its fast switching speeds make it an excellent choice for audio and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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